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quality Surface Mount PNP Transistor Nexperia BC806-16HR SOT23 Package Ideal for Amplification and Switching factory
quality Surface Mount PNP Transistor Nexperia BC806-16HR SOT23 Package Ideal for Amplification and Switching factory

Surface Mount PNP Transistor Nexperia BC806-16HR SOT23 Package Ideal for Amplification and Switching

Key Attributes
Model Number: BC806-16HR
Product Custom Attributes
Emitter-Base Voltage(Vebo):
8V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
80MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+175℃
Mfr. Part #:
BC806-16HR
Package:
TO-236AB
Product Description

Product Overview

The Nexperia BC806H series comprises PNP general-purpose transistors housed in a compact SOT23 (TO-236AB) surface-mounted plastic package. These transistors offer high current and high voltage capabilities, with two current gain selections available. Designed for high-temperature applications up to 175 C and AEC-Q101 qualified, they are suitable for general-purpose switching and amplification, including 48 V automotive board net applications.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT23 (TO-236AB)
  • Qualification: AEC-Q101 qualified

Technical Specifications

Model Type VCEO (V) IC (mA) ICM (A) hFE Range (VCE=-1V, IC=-100mA) hFE Range (VCE=-2V, IC=-500mA)
BC806-16H PNP -80 -500 -1 100 - 250 30 -
BC806-25H PNP -80 -500 -1 160 - 400 30 -
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage VCEO open base; Tamb = 25 C - - -80 V
Collector current IC Tamb = 25 C - - -500 mA
Peak collector current ICM single pulse; tp 1 ms; Tamb = 25 C - - -1 A
Collector-base breakdown voltage V(BR)CBO IC = -100 A; IE = 0 A; Tamb = 25 C -80 - - V
Collector-emitter breakdown voltage V(BR)CEO IC = -2 mA; IE = 0 A; Tamb = 25 C -80 - - V
Emitter-base breakdown voltage V(BR)EBO IE = -100 A; IC = 0 A; Tamb = 25 C -8 - - V
Collector-base cut-off current ICBO VCB = -64 V; IE = 0 A; Tamb = 25 C - - -100 nA
Collector-base cut-off current ICBO VCB = -64 V; IE = 0 A; Tj = 150 C - - -5 A
Emitter-base cut-off current IEBO VEB = -6.4 V; IC = 0 A; Tamb = 25 C - - -100 nA
Collector-emitter saturation voltage VCEsat IC = -100 mA; IB = -10 mA; Tamb = 25 C - - -150 mV
Collector-emitter saturation voltage VCEsat IC = -500 mA; IB = -50 mA; Tamb = 25 C - - -400 mV
Base-emitter voltage VBE VCE = -1 V; IC = -500 mA; Tamb = 25 C - - -1.2 V
Transition frequency fT VCE = -5 V; IC = -50 mA; f = 100 MHz; Tamb = 25 C 80 - - MHz
Collector capacitance Cc VCB = -10 V; IE = ie = 0 A; f = 1 MHz; Tamb = 25 C - 5 - pF
Emitter capacitance Ce VEB = -0.5 V; IC = ic = 0 A; f = 1 MHz; Tamb = 25 C - 47 - pF
Total power dissipation Ptot Tamb 25 C - - 300 mW
Total power dissipation Ptot Tamb = 25 C (on 1 cm PCB) - - 415 mW
Junction temperature Tj - - - 175 C
Storage temperature Tstg - -65 - 175 C

2410121845_Nexperia-BC806-16HR_C3201059.pdf

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