Gallium Nitride Enhancement Mode Transistor Miracle Power MGZ31N65 for Lighting and Power Applications
Key Attributes
Model Number:
MGZ31N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
6.5A
RDS(on):
230mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.1V
Reverse Transfer Capacitance (Crss@Vds):
2.7pF
Pd - Power Dissipation:
21.6W
Output Capacitance(Coss):
33pF
Input Capacitance(Ciss):
793pF
Gate Charge(Qg):
9nC
Mfr. Part #:
MGZ31N65
Package:
DFN8x8-3L
Product Description
MGZ31N65 650V GaN FET Enhancement Mode
Product Overview
The MGZ31N65 is a 650V Gallium Nitride (GaN) Field-Effect Transistor (FET) operating in enhancement mode. It offers a low on-resistance of 230m (typ.) at 8V VGS, very low QRR, and reduced crossover loss, making it easy to drive with commonly-used gate drivers. This GaN FET enables AC-DC bridgeless totem-pole PFC designs, leading to increased power density, reduced system size and weight, and lower overall system cost. It achieves increased efficiency in both hard- and soft-switched circuits. Key applications include power adapters, low power SMPS, and lighting.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: GaN FET Enhancement Mode
- Package: DFN8X8-3L
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 650 | V | |||
| V(TR)DSS | Transient Drain to Source Voltage a | 800 | V | |||
| VGSS | Gate-Source Voltage | ±18 | V | |||
| PD | Maximum power Dissipation @TC = 25C | 21.6 | W | |||
| ID | Drain Current-Continuous TC = 25C b | 6.5 | A | |||
| ID | Drain Current-Continuous TC = 100C b | 4.1 | A | |||
| IDM | Drain Current-Pulsed Pulse Width = 10s | 30 | A | |||
| TC | Operating Temperature Case | -55 | +150 | °C | ||
| TJ | Operating Temperature Junction | -55 | +150 | °C | ||
| TS | Storage Temperature | -55 | +150 | °C | ||
| TSOLD | Soldering Peak Temperature c | 260 | °C | |||
| Thermal Characteristics | ||||||
| RθJC | Thermal Resistance Junction-Case | 5.8 | °C/W | |||
| RθJA | Thermal Resistance Junction-Ambient d | 52 | °C/W | |||
| Electrical Characteristics (TJ = 25°C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| V(BL)DSS | Reverse Breakdown Voltage | VGS = 0V | 650 | - | - | V |
| IDSS | Reverse Leakage Current VGS = 0V, VDS = 650V TJ = 25°C | - | 1.0 | 10 | μA | |
| IDSS | Reverse Leakage Current VGS = 0V, VDS = 650V TJ = 150°C | - | 2.0 | - | μA | |
| IGSS | Gate-to-source Leakage Current VDS = 0V, VGS = ±18V | - | - | ±100 | nA | |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =500μA | 1.6 | 2.1 | 2.6 | V |
| RDS(on)eff | On Resistance | VGS = 8V, ID =5A TJ = 25°C | - | 230 | 300 | mΩ |
| RDS(on)eff | On Resistance | VGS = 8V, ID =5A TJ = 150°C | - | 405 | - | mΩ |
| Dynamic Characteristics | ||||||
| CISS | Input Capacitance | VGS = 0 V, VDS = 400 V f=1MHz | - | 793 | - | pF |
| COSS | Output Capacitance | - | 33 | - | ||
| CRSS | Transfer Capacitance | - | 2.7 | - | ||
| Co(er) | Output Capacitance, energy related | VGS = 0 V, VDS = 0~400 V | - | 99 | - | pF |
| Co(tr) | Output Capacitance, time related | - | 71 | - | ||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VGS = 0~8 V, VDS = 400 V , ID = 4 A ,Rg = 30 Ω | - | 13 | - | ns |
| tr | Turn-On Rise Time | - | 25 | - | ||
| td(off) | Turn-Off Delay Time | - | 47 | - | ||
| tf | Turn-Off Fall Time | - | 34 | - | ||
| QG | Total Gate Charge | VGS = 0~8 V, VDS = 400 V , ID = 4 A | - | 9.0 | - | nC |
| QGS | Gate-Source Charge | - | 1.6 | - | ||
| QGD | Gate-Drain Charge | - | 2.4 | - | ||
| QOSS | Output Charge | VGS=0V,VDS=0~400 V | - | 28 | - | nC |
| Drain-Source Diode Characteristics | ||||||
| IS | Reverse Current | VGS = 0 V | - | - | 6.5 | A |
| VSD | Reverse Voltage | VGS = 0V, IS = 2 A | - | 1.2 | - | V |
| VSD | Reverse Voltage | VGS = 0V, IS = 5 A | - | 2.0 | - | V |
| tRR | Reverse Recovery Time | IS = 5 A ,VDS= 400V, di/dt = 200 A/μs | - | 14 | - | ns |
| QRR | Reverse Recovery Charge | - | 11 | - | nC | |
Notes:
a. In off-state, spike duty cycle D<0.01, spike duration <1μs.
b. For increased stability at high current operation.
c. Reflow MSL3.
d. Device on one layer epoxy PCB for drain connection (vertical and without air stream cooling, with 6cm2 copper area and 70μm thickness).
2410122131_MIRACLE-POWER-MGZ31N65_C17702018.pdf
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