Power MOSFET NIKO SEM PZ0703EK P Channel Logic Level Enhancement Mode with 30 Volt Drain Source Voltage
Key Attributes
Model Number:
PZ0703EK
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.4V
Reverse Transfer Capacitance (Crss@Vds):
890pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
5.21nF@15V
Pd - Power Dissipation:
32W
Gate Charge(Qg):
121nC@10V
Mfr. Part #:
PZ0703EK
Package:
DFN-8-EP(6.1x5.2)
Product Description
Product Overview
The PZ0703EK is a P-Channel Logic Level Enhancement Mode MOSFET designed for various electronic applications. It offers robust performance with key parameters like Drain-Source Voltage of -30V and a low RDS(ON) of 7m @VGS = -10V. This MOSFET is suitable for applications requiring efficient power switching and control.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Drain-Source Voltage | V(BR)DSS | VGS = 0V, ID = -250mA | -30 | V | ||
| Gate-Source Voltage | 20 | V | ||||
| Continuous Drain Current | ID | TA = 25 C | -70 | A | ||
| Continuous Drain Current | ID | TA = 70 C | -56 | A | ||
| Pulsed Drain Current | IDM | -70 | A | |||
| Power Dissipation | PD | TA = 25 C | 1.6 | W | ||
| Power Dissipation | PD | TA = 70 C | 1 | W | ||
| Operating Junction & Storage Temperature Range | TJ, TSTG | -55 | 150 | C | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = -250mA | -30 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = -15V,VGS = -10V, ID = -20A | -1.3 | V | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = -10V, ID = -20A | 7 | m | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = -4.5V, ID = -20A | 10 | m | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -24V, VGS = 0V | -1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -20V, VGS = 0V , TJ = 125 C | -10 | A | ||
| Gate-Body Leakage | IGSS | VGS = 16V | -1 | A | ||
| Input Capacitance | Ciss | VDS = -15V, VGS = 0V, f = 1MHz | 5210 | pF | ||
| Output Capacitance | Coss | VDS = -15V, VGS = 0V, f = 1MHz | 960 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = -15V, VGS = 0V, f = 1MHz | 890 | pF | ||
| Total Gate Charge | Qg(VGS =10V) | VDS = -15V, ID = -20A | 64 | nC | ||
| Gate-Drain Charge | Qgd | VDS = -15V, ID = -20A | 12 | nC | ||
| Gate-Source Charge | Qgs | VDS = -15V, ID = -20A | 27 | nC | ||
| Turn-On Delay Time | td(on) | VDS = -15V, ID = -20A, VGS = -10V, RGS = 6 | 25 | nS | ||
| Rise Time | tr | VDS = -15V, ID = -20A, VGS = -10V, RGS = 6 | 16 | nS | ||
| Turn-Off Delay Time | td(off) | VDS = -15V, ID = -20A, VGS = -10V, RGS = 6 | 33 | nS | ||
| Fall Time | tf | VDS = -15V, ID = -20A, VGS = -10V, RGS = 6 | 100 | nS | ||
| Forward Transconductance | gfs | VDS = -15V,VGS = -10V, ID = -20A | 26.5 | S | ||
| Junction-to-Case | RqJC | 2.5 | C / W | |||
| Junction-to-Ambient | RqJA | 50 | C / W | |||
| Continuous Current | IS | -70 | A | |||
| Reverse Recovery Time | trr | IF = -20A, dlF/dt = 100A / S | 16 | nS | ||
| Reverse Recovery Charge | Qrr | IF = -20A, dlF/dt = 100A / S | 32 | nC | ||
| Forward Voltage | VSD | IF = -20A, VGS = 0V | -1.4 | V |
2410121947_NIKO-SEM-PZ0703EK_C532986.pdf
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