SMD NPN PNP Resistor Equipped Transistors Including Nexperia PUMD18 115 for Compact Circuit Solutions

Name: SMD NPN PNP Resistor Equipped Transistors Including Nexperia PUMD18 115 for Compact Circuit Solutions
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: PUMD18,115
Availability: InStock

Key Attributes

Model Number: PUMD18,115

Product Custom Attributes

Output Voltage(VO(on)):

Input Resistor:

4.7kΩ

Resistor Ratio:

2.1

Collector - Emitter Voltage VCEO:

50V

Mfr. Part #:

PUMD18,115

Package:

SOT-363

Product Description

Nexperia PEMD18; PUMD18 NPN/PNP Resistor-Equipped Transistors

The Nexperia PEMD18 and PUMD18 are NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. These devices feature built-in bias resistors (R1 = 4.7 k, R2 = 10 k), which reduce component count, simplify circuit design, and lower pick-and-place costs. They are AEC-Q101 qualified, making them suitable for automotive applications. Key benefits include a 100 mA output current capability and a simplified circuit design.

Product Overview

Nexperia's PEMD18 and PUMD18 are NPN/PNP double Resistor-Equipped Transistors (RET) designed for surface-mount applications. These devices integrate bias resistors (R1 = 4.7 k, R2 = 10 k), offering a compact solution that reduces component count and simplifies circuit design. They are ideal for low-current peripheral driving and controlling IC inputs, and are AEC-Q101 qualified for automotive use.

Product Attributes

Brand: Nexperia
Product Type: NPN/PNP Resistor-Equipped Transistors (RET)
Certifications: AEC-Q101 qualified
Package Types: SOT666 (PEMD18), SOT363 (PUMD18)

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Per transistor; for the PNP transistor (TR2) with negative polarity
VCEO	Collector-emitter voltage	open base	-	-	50	V
IO	Output current	-	-	-	100	mA
R1	Bias resistor 1 (input)	-	3.3	4.7	6.1	k
R2/R1	Bias resistor ratio	-	1.7	2.1	2.6	-
Per transistor; for the PNP transistor (TR2) with negative polarity
VCBO	Collector-base voltage	open emitter	-	-	50	V
VCEO	Collector-emitter voltage	open base	-	-	50	V
VEBO	Emitter-base voltage	open collector	-	-	7	V
VI	Input voltage TR1	positive	-	-	+20	V
VI	Input voltage TR1	negative	-	-	-7	V
VI	Input voltage TR2	positive	-	-	+7	V
VI	Input voltage TR2	negative	-	-	-20	V
IO	Output current	-	-	-	100	mA
ICM	Peak collector current	single pulse; tp 1 ms	-	-	100	mA
Per device
Ptot	Total power dissipation	Tamb 25 C; PEMD18 (SOT666)	-	-	300	mW
Ptot	Total power dissipation	Tamb 25 C; PUMD18 (SOT363)	-	-	300	mW
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-	-65	-	+150	C
Tstg	Storage temperature	-	-65	-	+150	C
Per transistor
Rth(j-a)	Thermal resistance from junction to ambient in free air; PEMD18 (SOT666)	-	-	-	625	K/W
Rth(j-a)	Thermal resistance from junction to ambient in free air; PUMD18 (SOT363)	-	-	-	625	K/W
Per device
Rth(j-a)	Thermal resistance from junction to ambient in free air; PEMD18 (SOT666)	-	-	-	417	K/W
Rth(j-a)	Thermal resistance from junction to ambient in free air; PUMD18 (SOT363)	-	-	-	417	K/W
Characteristics of built-in transistor
ICBO	Collector-base cut-off current	VCB = 50 V; IE = 0 A	-	-	100	nA
ICEO	Collector-emitter cut-off current	VCE = 30 V; IB = 0 A	-	-	1	A
ICEO	Collector-emitter cut-off current	VCE = 30 V; IB = 0 A; Tj = 150 C	-	-	5	A
IEBO	Emitter-base cut-off current	VEB = 5 V; IC = 0 A	-	-	600	A
hFE	DC current gain	VCE = 5 V; IC = 10 mA	50	-	-	-
VCEsat	Collector-emitter saturation voltage	IC = 10 mA; IB = 0.5 mA	-	-	100	mV
VI(off)	Off-state input voltage	VCE = 5 V; IC = 100 A	-	0.9	0.3	V
VI(on)	On-state input voltage	VCE = 0.3 V; IC = 20 mA	2.5	1.5	-	V
R1	Bias resistor 1 (input)	-	3.3	4.7	6.1	k
R2/R1	Bias resistor ratio	-	1.7	2.1	2.6	-
Cc	Collector capacitance	VCB = 10 V; IE = ie = 0 A; f = 1 MHz	-	-	2.5	pF
Cc	Collector capacitance	VCB = 10 V; IE = ie = 0 A; f = 1 MHz	-	-	3	pF
fT	Transition frequency	VCE = 5 V; IC = 10 mA; f = 100 MHz	-	230	-	MHz
fT	Transition frequency	VCE = 5 V; IC = 10 mA; f = 100 MHz	-	180	-	MHz

Applications

Low current peripheral driver
Control of IC inputs
Replaces general-purpose transistors in digital applications

Ordering Information

Type number	Package Name	Description	Version
PEMD18	SOT666	Plastic surface-mounted package; 6 leads	-
PUMD18	SC-88	Plastic surface-mounted package; 6 leads	SOT363

Marking Codes

Type number	Marking code[1]
PEMD18	6B
PUMD18	T5*

[1] * = placeholder for manufacturing site code

2410121745_Nexperia-PUMD18-115_C553511.pdf

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SMD NPN PNP Resistor Equipped Transistors Including Nexperia PUMD18 115 for Compact Circuit Solutions