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quality NPN PNP Double Transistor Nexperia PUMD13 135 with Integrated Bias Resistors in Small SOT363 Package factory
quality NPN PNP Double Transistor Nexperia PUMD13 135 with Integrated Bias Resistors in Small SOT363 Package factory

NPN PNP Double Transistor Nexperia PUMD13 135 with Integrated Bias Resistors in Small SOT363 Package

Key Attributes
Model Number: PUMD13,135
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
4.7kΩ
Resistor Ratio:
10
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMD13,135
Package:
TSSOP-6(SOT-363)
Product Description

Product Overview

The Nexperia PUMD13 is a Resistor-Equipped Double Transistor (RET) featuring both NPN and PNP configurations in a compact SOT363 (SC-88) SMD plastic package. This device offers a 100 mA output current capability and incorporates built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. It is ideal for low-current peripheral driving, controlling IC inputs, and replacing general-purpose transistors in digital applications.

Product Attributes

  • Brand: Nexperia
  • Package Type: TSSOP6 (SOT363)
  • Configuration: NPN/PNP Double Transistor

Technical Specifications

Parameter Conditions Min Typ Max Unit
Collector-Emitter Voltage (VCEO) - Per Transistor Open base - - 50 V
Output Current (IO) - Per Transistor - - - 100 mA
Bias Resistor R1 (Input) [1] 3.3 4.7 6.1 k
Bias Resistor Ratio R2/R1 [1] 8 10 12 -
Collector-Base Voltage (VCBO) - Per Transistor Open emitter - - 50 V
Emitter-Base Voltage (VEBO) - Per Transistor Open collector - - 5 V
Input Voltage (VI) - TR1 (NPN) Positive - - 30 V
Input Voltage (VI) - TR1 (NPN) Negative -30 - - V
Input Voltage (VI) - TR2 (PNP) Positive - - 5 V
Input Voltage (VI) - TR2 (PNP) Negative -30 - - V
Total Power Dissipation (Ptot) - Per device Tamb 25 C [1] - - 300 mW
Total Power Dissipation (Ptot) - Per transistor Tamb 25 C [1] - - 200 mW
Junction Temperature (Tj) - - - 150 C
Ambient Temperature (Tamb) - -65 - 150 C
Storage Temperature (Tstg) - -65 - 150 C
Collector-Base Breakdown Voltage (V(BR)CBO) - Per Transistor IC = 100 A; IE = 0 A 50 - - V
Collector-Emitter Breakdown Voltage (V(BR)CEO) - Per Transistor IC = 2 mA; IB = 0 A 50 - - V
Collector-Base Cut-off Current (ICBO) - Per Transistor VCB = 50 V; IE = 0 A - - 100 nA
Collector-Emitter Cut-off Current (ICEO) - Per Transistor VCE = 30 V; IB = 0 A - - 1 A
Collector-Emitter Cut-off Current (ICEO) - Per Transistor VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
Emitter-Base Cut-off Current (IEBO) - Per Transistor VEB = 5 V; IC = 0 A - - 170 A
DC Current Gain (hFE) - Per Transistor VCE = 5 V; IC = 10 mA 100 - - -
Collector-Emitter Saturation Voltage (VCEsat) - Per Transistor IC = 5 mA; IB = 0.25 mA - - 100 mV
Off-State Input Voltage (VI(off)) - Per Transistor VCE = 5 V; IC = 100 A - 0.6 0.5 V
On-State Input Voltage (VI(on)) - Per Transistor VCE = 0.3 V; IC = 5 mA 1.3 0.9 - V
Collector Capacitance (Cc) - TR1 (NPN) VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz - - 2.5 pF
Transition Frequency (fT) - TR1 (NPN) VCE = 5 V; IC = 10 mA; f = 100 MHz [2] - 230 - MHz
Collector Capacitance (Cc) - TR2 (PNP) VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz - - 3 pF
Transition Frequency (fT) - TR2 (PNP) VCE = -5 V; IC = -10 mA; f = 100 MHz [2] - 180 - MHz
Package Body Dimensions - 2.1 x 1.25 x 0.95 - - mm
Package Pitch - 0.65 - - mm
Marking Code - 3%1 - - -

[1] See section "Test information" for resistor calculation and test conditions.

[2] Characteristics of built-in transistor.


2410010332_Nexperia-PUMD13-135_C553506.pdf

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