Nexperia PUMH10 115 NPN NPN Double Transistor in Compact SOT363 Package with Built in Bias Resistors

Name: Nexperia PUMH10 115 NPN NPN Double Transistor in Compact SOT363 Package with Built in Bias Resistors
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: PUMH10,115
Availability: InStock

Key Attributes

Model Number: PUMH10,115

Product Custom Attributes

Emitter-Base Voltage VEBO:

Input Resistor:

2.86kΩ

Resistor Ratio:

Collector - Emitter Voltage VCEO:

50V

Mfr. Part #:

PUMH10,115

Package:

TSSOP-6(SOT-363)

Product Description

Nexperia PUMH10: NPN/NPN Resistor-Equipped Double Transistor

Product Overview

The Nexperia PUMH10 is a highly integrated NPN/NPN double Resistor-Equipped Transistor (RET) designed for efficiency and simplicity in electronic circuits. Featuring built-in bias resistors, it significantly simplifies circuit design, reduces component count, and lowers pick-and-place costs. This device is ideal for low-current peripheral driving, control of IC inputs, and as a replacement for general-purpose transistors in digital applications. Its compact SOT363 (SC-88) package makes it suitable for space-constrained designs.

Product Attributes

Brand: Nexperia
Type: NPN/NPN Double Transistor
Package Type: TSSOP6 (SOT363)
Complementary Products: PUMD10 (NPN/PNP), PUMB10 (PNP/PNP)

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Per Transistor
VCEO	Collector-emitter voltage	Open base	-	-	50	V
IO	Output current	-	-	-	100	mA
VCBO	Collector-base voltage	Open emitter	-	-	50	V
VEBO	Emitter-base voltage	Open collector	-	-	5	V
VI	Input voltage	Positive	-	-	12	V
VI	Input voltage	Negative	-	-5	-	V
Ptot	Total power dissipation	Tamb 25 C	-	-	200	mW
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-	-65	-	150	C
Tstg	Storage temperature	-	-65	-	150	C
Rth(j-a)	Thermal resistance (junction to ambient)	In free air	-	-	625	K/W
V(BR)CBO	Collector-base breakdown voltage	IC = 100 A; IE = 0 A; Tamb = 25 C	50	-	-	V
V(BR)CEO	Collector-emitter breakdown voltage	IC = 2 mA; IB = 0 A; Tamb = 25 C	50	-	-	V
ICBO	Collector-base cut-off current	VCB = 50 V; IE = 0 A	-	-	100	nA
ICEO	Collector-emitter cut-off current	VCE = 30 V; IB = 0 A	-	-	100	nA
ICEO	Collector-emitter cut-off current	VCE = 30 V; IB = 0 A; Tj = 150 C	-	-	5	A
IEBO	Emitter-base cut-off current	VEB = 5 V; IC = 0 A	-	-	180	A
hFE	DC current gain	VCE = 5 V; IC = 10 mA	100	-	-	-
VCEsat	Collector-emitter saturation voltage	IC = 5 mA; IB = 0.25 mA	-	-	100	mV
VI(off)	Off-state input voltage	VCE = 5 V; IC = 100 A	-	0.6	0.5	V
VI(on)	On-state input voltage	VCE = 0.3 V; IC = 5 mA	1.1	0.75	-	V
R1	Bias resistor 1 (input)	-	1.54	2.2	2.86	k
R2/R1	Bias resistor ratio	-	17	21	26	-
Cc	Collector capacitance	VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz	-	-	2.5	pF
fT	Transition frequency	VCE = 5 V; IC = 10 mA; f = 100 MHz	-	230	-	MHz
Per Device
Ptot	Total power dissipation	Tamb = 25 C	-	-	300	mW
Rth(j-a)	Thermal resistance (junction to ambient)	FR4 PCB, single-sided, 35 m copper, tin-plated and standard footprint	-	-	417	K/W

Ordering Information

Type number	Package Name	Description	Version
PUMH10	TSSOP6	Plastic, surface-mounted package; 6 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body	SOT363

Marking

Type number	Marking code
PUMH10	H%0

% = placeholder for manufacturing site code

2410121952_Nexperia-PUMH10-115_C81379.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.

Nexperia PUMH10 115 NPN NPN Double Transistor in Compact SOT363 Package with Built in Bias Resistors