86--136 6733 2386
quality Nexperia PUMD4 115 transistor compact SOT363 package double transistor with built in bias resistors factory
quality Nexperia PUMD4 115 transistor compact SOT363 package double transistor with built in bias resistors factory

Nexperia PUMD4 115 transistor compact SOT363 package double transistor with built in bias resistors

Key Attributes
Model Number: PUMD4,115
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
10kΩ
Resistor Ratio:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMD4,115
Package:
SOT-363
Product Description

Product Overview

The Nexperia PUMD4 is a high-performance NPN/PNP resistor-equipped double transistor designed for low-current peripheral driving and digital applications. It features built-in bias resistors, simplifying circuit design and reducing component count. This transistor is an ideal replacement for general-purpose transistors in digital applications and is suitable for controlling IC inputs. Its compact SOT363 (SC-88) package makes it ideal for space-constrained designs.

Product Attributes

  • Brand: Nexperia
  • Package Type: TSSOP6 (SOT363)
  • Complementary Products: PUMH4 (NPN/NPN), PUMB4 (PNP/PNP)

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
VCEO Collector-emitter voltage Open base - - 50 V
IO Output current - - - 100 mA
R1 Bias resistor 1 (input) [1] 7 10 13 k
Limiting values
Per transistor; for the PNP transistor with negative polarity
VCBO Collector-base voltage Open emitter - - 50 V
VCEO Collector-emitter voltage Open base - - 50 V
VEBO Emitter-base voltage Open collector - - 5 V
IO Output current - - - 100 mA
Per device
Ptot Total power dissipation Tamb 25 C [1] - - 300 mW
Characteristics
Per transistor; for the PNP transistor with negative polarity
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A; Tamb = 25 C 50 - - V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tamb = 25 C - - 1 A
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 50 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 100 nA
hFE DC current gain VCE = 5 V; IC = 1 mA; Tamb = 25 C 200 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - - 150 mV
R1 Bias resistor 1 (input) [1] 7 10 13 k
Transistor TR1 (NPN)
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 2.5 pF
Transistor TR2 (PNP)
Cc Collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 3 pF
Package dimensions
Body size 2.1 mm x 1.25 mm x 0.95 mm - - - - -
Pitch 0.65 mm - - - - -

2411121135_Nexperia-PUMD4-115_C553520.pdf

Related Products
quality DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability factory
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
quality N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities factory
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
quality Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD factory
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
quality YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages factory
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.