Durable cascode gan hemt device NITRIDE YHJ-65P080DA for motor drive and power supply systems
Key Attributes
Model Number:
YHJ-65P080DA
Product Custom Attributes
Mfr. Part #:
YHJ-65P080DA
Package:
DFN-8(8x8)
Product Description
Product Overview
The YHJ-65P080DA is a normally-off Cascode GaN HEMT device designed for high-power applications. It offers high breakdown voltage, high current capability, and high operating speed, making it suitable for demanding power electronics systems. Its cascode configuration enhances performance and reliability.
Product Attributes
- Brand: YHJ
- Origin: Jiangxi Yuhongjin Chip Technology Co., Ltd.
- Package Type: DFN 8x8 mm
Technical Specifications
| Part Number | Description | VDSS (min.) | RDS(ON) (typ.) | QG (typ.) | Package | Gate Drive Voltage Compatibility | Applications |
| YHJ-65P080DA | Cascode GaN HEMT | 650V | 80m | 12nC | DFN 8x8 mm | -20V to +20V | Switch Mode Power Supplies (SMPS), AC-DC/ DC-DC Converters, Motor Drives |
| Symbol | Parameter | Value | Unit | Conditions |
| VDSS | Drain-source voltage | 650 | V | VGS=0V |
| VGSS | Gate- source voltage | -20V ~ +20V | V | |
| Ptot | Total power dissipation @TC = 25oC | 119 | W | |
| ID | Drain current (continuous) at TC = 25C operation | 25.5 | A | |
| ID | Drain current (continuous) at TC = 100C operation | 16.1 | A | |
| IDM | Pulsed drain current (pulse width: 10s) | 105 | A | |
| Tc | Operating temperature Case | -55 to +150 | C | |
| TJ | Junction | -55 to +150 | C | |
| TS | Storage temperature | -55 to +150 | C | |
| TSOLD | Soldering peak temperatureb | 260 | C | For 10 sec., 1.6mm from the case |
| RJA | Thermal resistance junction-ambient | 64 | C/W | |
| RJC | Thermal resistance junction-case | 1.05 | C/W | |
| VGS(th) | Gate threshold voltage | 1.7 - 2.2 | V | VDS= 10V ,ID=1mA |
| RDS(on) | Static drain-source on- resistance | - 80 - 95 | m | VGS=6V, ID=5A, TJ=25oC |
| RDS(on) | Static drain-source on- resistance | - 180 - | m | VGS=6V, ID=5A, TJ=150oC |
| IDSS | Drain-source leakage current | - 2 - 10 | A | VGS =0V, VDS =650V, TJ=25oC |
| IDSS | Drain-source leakage current | - 10 - | A | VGS =0V, VDS =650V, TJ=150oC |
| IGSS | Gate-to-source forward leakage current | - - 100 | nA | VGS=20V |
| IGSS | Gate-to-source reverse leakage current | - - -100 | nA | VGS=-20V |
| CISS | Input capacitance | 910 - | pF | VGS=0V, VDS=400V, f=1MHz |
| COSS | Output capacitance | - 26.4 - | pF | |
| CRSS | Reverse transfer capacitance | - 3.8 - | pF | |
| QG | Gate charge | - 12 - | nC | VGS=0~10V, VDS=400V, IDS =5A |
| QGS | Gate-source charge | - 4.3 - | nC | |
| QOSS | Output charge | - 36 - | nC | VGS=0V, VDS=0~400V |
| tD(on) | Turn-on delay time | - 13 - | ns | VDS=400V, VGS=0 to 10V, IDS=2A ,RG=25 |
| tD(off) | Turn-off delay time | - 43 - | ns | |
| QRR | Reverse recovery charge | - 15 - | nC | Is=5A, VDS =400V |
2408011058_NITRIDE-YHJ-65P080DA_C37328928.pdf
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