Nexperia PUMD15 115 RET Transistor Featuring Built in Bias Resistors for Reduced Pick and Place Costs

Key Attributes
Model Number: PUMD15,115
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
6.1kΩ
Resistor Ratio:
1.2
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMD15,115
Package:
SOT-363
Product Description

Product Overview

The Nexperia PEMD15 and PUMD15 are NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. These devices feature built-in bias resistors, reducing component count and simplifying circuit design, which in turn lowers pick and place costs. They are AEC-Q101 qualified, making them suitable for low current peripheral driver applications, control of IC inputs, and as replacements for general-purpose transistors in digital applications.

Product Attributes

  • Brand: Nexperia (formerly NXP Standard Product business)
  • Certifications: AEC-Q101 qualified
  • Resistor Values: R1 = 4.7 k, R2 = 4.7 k

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor (TR2) with negative polarity
VCEO Collector-emitter voltage open base - - 50 V
IO Output current - - - 100 mA
R1 Bias resistor 1 (input) - 3.3 4.7 6.1 k
R2/R1 Bias resistor ratio - 0.8 1 1.2 -
VCBO Collector-base voltage open emitter - - 50 V
VEBO Emitter-base voltage open collector - - 10 V
VI Input voltage (TR1 positive) - - - +30 V
VI Input voltage (TR1 negative) - -10 - - V
VI Input voltage (TR2 positive) - - - +10 V
VI Input voltage (TR2 negative) - -30 - - V
ICM Peak collector current single pulse; tp 1 ms - - 100 mA
Total power dissipation
Ptot Total power dissipation Tamb 25 C (PEMD15 SOT666) - - 200 mW
Ptot Total power dissipation Tamb 25 C (PUMD15 SOT363) - - 200 mW
Ptot Total power dissipation Tamb 25 C (Per device PEMD15 SOT666) - - 300 mW
Ptot Total power dissipation Tamb 25 C (Per device PUMD15 SOT363) - - 300 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - +150 C
Tstg Storage temperature - -65 - +150 C
Thermal characteristics
Rth(j-a) Thermal resistance from junction to ambient in free air (PEMD15 SOT666) - - 625 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air (PUMD15 SOT363) - - 625 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air (Per device PEMD15 SOT666) - - 417 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air (Per device PUMD15 SOT363) - - 417 K/W
Characteristics
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 1 A
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 900 A
hFE DC current gain VCE = 5 V; IC = 10 mA 30 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A - 1.1 0.5 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 20 mA 2.5 1.9 - V
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz (TR1 NPN) - - 2.5 pF
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz (TR2 PNP) - - 3 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz (TR1 NPN) - 230 - MHz
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz (TR2 PNP) - 180 - MHz
Package Outline
Model Package Type JEITA Dimensions
PEMD15 SOT666 - 1.7 x 1.5 x 1.3 mm
PUMD15 SOT363 SC-88 2.2 x 1.3 x 0.8 mm
Ordering Information
Type Number Package Name Description Version
PEMD15 SOT666 Plastic surface-mounted package; 6 leads -
PUMD15 SOT363 Plastic surface-mounted package; 6 leads SC-88

2410121745_Nexperia-PUMD15-115_C553508.pdf

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