Nexperia BC807-40 215 PNP Transistor Featuring High Current Capability and Versatile Gain Selections

Name: Nexperia BC807-40 215 PNP Transistor Featuring High Current Capability and Versatile Gain Selections
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BC807-40,215
Availability: InStock

Key Attributes

Model Number: BC807-40,215

Product Custom Attributes

Current - Collector Cutoff:

100nA

Pd - Power Dissipation:

250mW

Transition Frequency(fT):

80MHz

Type:

PNP

Current - Collector(Ic):

500mA

Collector - Emitter Voltage VCEO:

45V

Operating Temperature:

-65℃~+150℃

Mfr. Part #:

BC807-40,215

Package:

SOT-23

Product Description

Nexperia BC807 Series PNP General-Purpose Transistors

Product Overview

The Nexperia BC807 series comprises PNP general-purpose transistors in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. These transistors offer high current capability and come with three distinct current gain selections, making them suitable for general-purpose switching and amplification applications. They are designed to provide reliable performance in a wide range of electronic circuits.

Product Attributes

Brand: Nexperia
Package Type: SOT23 (TO-236AB)
Technology: PNP General-Purpose Transistor
Qualification: Non-automotive (unless specified otherwise)

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
VCEO	Collector-emitter voltage	Open base; Tamb = 25 C	-	-	-45	V
IC	Collector current	Tamb = 25 C	-	-	-500	mA
ICM	Peak collector current	Single pulse; tp 1 ms; Tamb = 25 C	-	-	-1	A
hFE	DC current gain	BC807 [1]	100	-	600	-
		BC807-16 [1]	100	-	250	-
		BC807-25 [1]	160	-	400	-
		BC807-40 [1]	250	-	600	-
VCEsat	Collector-emitter saturation voltage	IC = -500 mA; IB = -50 mA; Tamb = 25 C [1]	-	-	-700	mV
VBE	Base-emitter voltage	VCE = -1 V; IC = -500 mA; Tamb = 25 C [1][2]	-	-	-1.2	V
fT	Transition frequency	VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 C	80	-	-	MHz
Cc	Collector capacitance	VCB = -10 V; IE = ie = 0 A; f = 1 MHz; Tamb = 25 C	-	5	-	pF
VCBO	Collector-base breakdown voltage	Open emitter; Tamb = 25 C	-	-	-50	V
V(BR)CEO	Collector-emitter breakdown voltage	Open base; Tamb = 25 C	-	-	-45	V
V(BR)EBO	Emitter-base breakdown voltage	Open collector; Tamb = 25 C	-	-	-5	V
Ptot	Total power dissipation	Tamb 25 C [1][2]	-	-	250	mW
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-	-65	-	150	C
Tstg	Storage temperature	-	-65	-	150	C

[1] Pulsed; tp 300 s; 0.02

[2] VBE decreases by about 2 mV/K with increasing temperature.

Pinning:

1: Base (B)
2: Emitter (E)
3: Collector (C)

Ordering Information:

BC807
BC807-16
BC807-25
BC807-40

Marking Codes:

BC807: 5D%
BC807-16: 5A%
BC807-25: 5B%
BC807-40: 5C%

(% = placeholder for manufacturing site code)

Package Outline: SOT23 (TO-236AB)

Soldering Footprints: Reflow and Wave soldering options available for SOT23 (TO-236AB).

2410311247_Nexperia-BC807-40-215_C57316.pdf

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Nexperia BC807-40 215 PNP Transistor Featuring High Current Capability and Versatile Gain Selections