NPN Transistor Model Nexperia PDTC144WT215 Featuring Built In Bias Resistors for Switching Performance

Key Attributes
Model Number: PDTC144WT,215
Product Custom Attributes
Input Resistor:
47kΩ
Resistor Ratio:
0.47
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTC144WT,215
Package:
SOT-23
Product Description

Nexperia PDTC144W Series NPN Resistor-Equipped Transistors

The Nexperia PDTC144W series are NPN resistor-equipped transistors designed for general-purpose switching and amplification. These components feature built-in bias resistors (R1 = 47 k, R2 = 22 k), simplifying circuit design, reducing component count, and lowering pick-and-place costs. They are ideal for inverter and interface circuits, as well as circuit driver applications.

Product Attributes

  • Brand: Nexperia (formerly NXP Semiconductors)
  • Origin: Made in Hong Kong, Malaysia, or China (indicated by package marking code)

Technical Specifications

Model Package Marking Code PNP Complement VCEO (Max) IO (DC) (Max) R1 (Bias Resistor) R2 (Bias Resistor)
PDTC144WE SOT416 (SC-75) 42 PDTA144WE -50 V 100 mA 47 k 22 k
PDTC144WEF SOT490 (SC-89) 34 PDTA144WEF -50 V 100 mA 47 k 22 k
PDTC144WK SOT346 (SC-59) 41 PDTA144WK -50 V 100 mA 47 k 22 k
PDTC144WM SOT883 (SC-101) DD PDTA144WM -50 V 100 mA 47 k 22 k
PDTC144WS SOT54 (TO-92) TC144W PDTA144WS -50 V 100 mA 47 k 22 k
PDTC144WT SOT23 *20(1) PDTA144WT -50 V 100 mA 47 k 22 k
PDTC144WU SOT323 (SC-70) *20(1) PDTA144WU -50 V 100 mA 47 k 22 k
Parameter Conditions Min. Typ. Max. Unit
VCBO (Collector-base voltage) Open emitter - - 50 V
VCEO (Collector-emitter voltage) Open base - - 50 V
VEBO (Emitter-base voltage) Open collector - - 10 V
Vi (Input voltage) Positive - - 40 V
Vi (Input voltage) Negative - - -10 V
IO (Output current, DC) - - - 100 mA
ICM (Peak collector current) - - - 100 mA
Ptot (Total power dissipation) Tamb 25 C, SOT54 (note 1) - - 500 mW
Ptot (Total power dissipation) Tamb 25 C, SOT23 (note 1) - - 250 mW
Ptot (Total power dissipation) Tamb 25 C, SOT346 (note 1) - - 250 mW
Ptot (Total power dissipation) Tamb 25 C, SOT323 (note 1) - - 200 mW
Ptot (Total power dissipation) Tamb 25 C, SOT490 (notes 1 and 2) - - 250 mW
Ptot (Total power dissipation) Tamb 25 C, SOT883 (notes 2 and 3) - - 250 mW
Ptot (Total power dissipation) Tamb 25 C, SOT416 (note 1) - - 150 mW
Tstg (Storage temperature) - -65 - 150 C
Tj (Junction temperature) - - - 150 C
Tamb (Operating ambient temperature) - -65 - 150 C
ICBO (Collector-base cut-off current) VCB = 50 V; IE = 0 A - - 100 nA
ICEO (Collector-emitter cut-off current) VCE = 30 V; IB = 0 A - - 1 A
ICEO (Collector-emitter cut-off current) VCE = 30 V; IB = 0 A; Tj = 150 C - - 50 A
IEBO (Emitter-base cut-off current) VEB = 5 V; IC = 0 A - - 110 A
hFE (DC current gain) VCE = 5 V; IC = 5 mA 60 - - -
VCEsat (Collector-emitter saturation voltage) IC = 10 mA; IB = 0.5 mA - - 150 mV
Vi(off) (Input-off voltage) IC = 100 A; VCE = 5 V - 1.7 1.2 V
Vi(on) (Input-on voltage) IC = 2 mA; VCE = 0.3 V 4 2.7 - V
R1 (Input resistor) - 33 47 61 k
Resistor ratio (R2/R1) - 0.37 0.47 0.57 -
Cc (Collector capacitance) IE = ie = 0 A; VCB = 10 V; f = 1 MHz - - 2.5 pF

Notes:
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 m copper strip line.

For additional information, please visit: www.nexperia.com

© Nexperia B.V. (2004). All rights reserved.


2410010331_Nexperia-PDTC144WT-215_C168869.pdf

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