40 volt 1 amp PNP low VCEsat transistor Nexperia PBSS5140T 215 for switching and muting applications
Key Attributes
Model Number:
PBSS5140T,215
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
450mW
Transition Frequency(fT):
150MHz
Type:
PNP
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PBSS5140T,215
Package:
SOT-23
Product Description
Product Overview
The Nexperia PBSS5140T is a 40 V, 1 A PNP low VCEsat transistor designed for general-purpose switching and muting applications. It offers a low collector-emitter saturation voltage (VCEsat), high collector current capability (IC and ICM), and high collector current gain (hFE) at high IC, contributing to high efficiency through reduced heat generation. This transistor is AEC-Q101 qualified, making it suitable for automotive applications. Key applications include LCD backlighting, supply line switching circuits, and battery-driven equipment such as mobile phones, video cameras, and handheld devices.
Product Attributes
- Brand: Nexperia
- Type: PNP low VCEsat transistor
- Package Type: SOT23 (TO-236AB)
- Qualification: AEC-Q101 qualified
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | -40 | V |
| IC | Collector current | - | - | - | -1 | A |
| ICM | Peak collector current | Single pulse; tp 1 ms | - | - | -2 | A |
| RCEsat | Collector-emitter saturation resistance | IC = -500 mA; IB = -50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 300 | 500 | m |
| VCBO | Collector-base voltage | Open emitter | - | - | -40 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | -5 | V |
| IBM | Peak base current | Single pulse; tp 1 ms | - | - | -1 | A |
| Ptot | Total power dissipation | Tamb 25 C | - | - | 300 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance from junction to ambient | In free air [1] | - | - | 417 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | In free air [2] | - | - | 278 | K/W |
| ICBO | Collector-base cut-off current | VCB = -40 V; IE = 0 A; Tamb = 25 C | - | - | -100 | nA |
| ICEO | Collector-emitter cut-off current (base open) | VCB = -40 V; IE = 0 A; Tj = 150 C | - | - | -50 | A |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A; Tamb = 25 C | - | - | -100 | nA |
| hFE | DC current gain | VCE = -5 V; IC = -1 mA; Tamb = 25 C | 300 | - | - | - |
| hFE | DC current gain | VCE = -5 V; IC = -100 mA; Tamb = 25 C | 300 | - | 800 | - |
| hFE | DC current gain | VCE = -5 V; IC = -500 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 250 | - | - | - |
| hFE | DC current gain | VCE = -5 V; IC = -1 A; pulsed; tp 300 s; 0.02; Tamb = 25 C | 160 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = -100 mA; IB = -1 mA; Tamb = 25 C | - | - | -200 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = -500 mA; IB = -50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | -250 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = -1 A; IB = -100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | -500 | mV |
| VBEsat | Base-emitter saturation voltage | IC = -1 A; IB = -50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | -1.1 | V |
| VBEon | Base-emitter turn-on voltage | VCE = -5 V; IC = -1 A; Tamb = 25 C | - | - | -1 | V |
| td | Delay time | - | - | 10 | - | ns |
| tr | Rise time | - | - | 31 | - | ns |
| ton | Turn-on time | - | - | 41 | - | ns |
| ts | Storage time | - | - | 195 | - | ns |
| tf | Fall time | - | - | 65 | - | ns |
| toff | Turn-off time | VCC = -10 V; IC = -0.5 A; IBon = -25 mA; IBoff = 25 mA; Tamb = 25 C | - | 260 | - | ns |
| fT | Transition frequency | VCE = -10 V; IC = -50 mA; f = 100 MHz; Tamb = 25 C | 150 | - | - | MHz |
| Cc | Collector capacitance | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 12 | pF |
2410010231_Nexperia-PBSS5140T-215_C89581.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
