Digital transistor onsemi MUN5213DW1T1G with base resistor network enabling compact and circuit layouts
Key Attributes
Model Number:
MUN5213DW1T1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
47kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MUN5213DW1T1G
Package:
SOT-363
Product Description
Product Overview
This series of digital transistors integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor. This design eliminates the need for external bias resistors, simplifying circuit design, reducing board space, and lowering component count. These devices are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. S and NSV prefixes are available for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Certifications: AEC-Q101 Qualified (for S and NSV prefixes), PPAP Capable (for S and NSV prefixes)
- Material: Pb-Free, Halogen Free/BFR Free
- RoHS Compliant: Yes
Technical Specifications
| Device | Package | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCEO) | Collector Current (IC) | Input Forward Voltage (VIN(fwd)) | Input Reverse Voltage (VIN(rev)) | Input Resistor (R1) | Resistor Ratio (R1/R2) |
| MUN5213DW1 | SOT-363 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 10 Vdc | 32.9 - 61.1 k | 0.8 - 1.2 |
| NSBC144EDXV6 | SOT-563 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 10 Vdc | 32.9 - 61.1 k | 0.8 - 1.2 |
| NSBC144EDP6 | SOT-963 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 10 Vdc | 32.9 - 61.1 k | 0.8 - 1.2 |
2410010232_onsemi-MUN5213DW1T1G_C95381.pdf
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