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quality 50 V 3 A PNP transistor Nexperia PBSS5350X 115 designed for automotive applications and power control factory
quality 50 V 3 A PNP transistor Nexperia PBSS5350X 115 designed for automotive applications and power control factory

50 V 3 A PNP transistor Nexperia PBSS5350X 115 designed for automotive applications and power control

Key Attributes
Model Number: PBSS5350X,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1.4W
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PBSS5350X,115
Package:
SOT-89
Product Description

Product Overview

The Nexperia PBSS5350X is a 50 V, 3 A PNP low VCEsat transistor housed in a SOT89 plastic package. Designed for high efficiency and reduced heat generation, this transistor offers high collector current capability and is AEC-Q101 qualified for automotive applications. It is suitable for power management, DC/DC converters, supply line switching, battery chargers, LCD backlighting, peripheral drivers, and inductive load drivers such as relays, buzzers, and motors.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT89
  • Complementary NPN Transistor: PBSS4350X
  • Qualification: AEC-Q101

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage Open base - - -50 V
IC Collector current - - - -3 A
ICM Peak collector current Limited by Tj(max) - - -5 A
RCEsat Collector-emitter saturation resistance IC = -2 A; IB = -200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - 90 135 m
VCBO Collector-base voltage Open emitter - - -50 V
VEBO Emitter-base voltage Collector open - - -5 V
IB Base current - - - -0.5 A
Ptot Total power dissipation Tamb 25 C - - 1.6 W
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance junction to ambient Free air, mounted on FR4 PCB, single-sided copper, tin-plated and standard footprint - 225 - K/W
Rth(j-sp) Thermal resistance junction to solder point - - 16 - K/W
V(BR)CBO Collector-base breakdown voltage IC = -100 A; IE = 0 A; Tamb = 25 C -50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = -10 mA; IB = 0 A; Tamb = 25 C -50 - - V
V(BR)EBO Emitter-base breakdown voltage Collector open; IE = -100 A; IC = 0 A; Tamb = 25 C -5 - - V
ICBO Collector-base cut-off current VCB = -50 V; IE = 0 A; Tamb = 25 C - - -100 nA
ICES Collector-emitter cut-off current VCB = -50 V; IE = 0 A; Tj = 150 C - - -50 A
IEBO Emitter-base cut-off current VCE = -50 V; VBE = 0 V; Tamb = 25 C - - -100 nA
hFE DC current gain VCE = -2 V; IC = -2 A; pulsed; tp 300 s; 0.02; Tamb = 25 C 80 - - -
VCEsat Collector-emitter saturation voltage IC = -2 A; IB = -200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - -270 mV
VBEsat Base-emitter saturation voltage IC = -3 A; IB = -300 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - -390 mV
fT Transition frequency VCE = -5 V; IC = -100 mA; f = 100 MHz; Tamb = 25 C 100 - - MHz
Cc Collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 35 pF

2410121847_Nexperia-PBSS5350X-115_C426844.pdf

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