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quality SOT23 PNP Resistor Equipped Transistor Nexperia PDTB113ZT 215 with 50 Volt Collector Emitter Voltage factory
quality SOT23 PNP Resistor Equipped Transistor Nexperia PDTB113ZT 215 with 50 Volt Collector Emitter Voltage factory

SOT23 PNP Resistor Equipped Transistor Nexperia PDTB113ZT 215 with 50 Volt Collector Emitter Voltage

Key Attributes
Model Number: PDTB113ZT,215
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
1kΩ
Resistor Ratio:
11
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTB113ZT,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia PDTB113ZT is a PNP Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. This small SOT23 (TO-236AB) SMD plastic package offers a 500 mA output current capability and a 50 V collector-emitter voltage. Its built-in bias resistors simplify circuit design, reduce component count, and lower pick-and-place costs, making it a cost-saving alternative for BC807 series in digital applications. The device is AEC-Q101 qualified, suitable for controlling IC inputs and switching loads.

Product Attributes

  • Brand: Nexperia
  • Product Type: PNP Resistor-Equipped Transistor (RET)
  • Package Type: SOT23 (TO-236AB)
  • Qualification: AEC-Q101 qualified
  • NPN Complement: PDTD113ZT

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - -50 V
IO Output current - - - -500 mA
R1 Bias resistor - 1 0.7 1.3 k
R2/R1 Bias resistor ratio Tamb = 25 C 9 10 11 -
VCBO Collector-base voltage open emitter - - -50 V
VEBO Emitter-base voltage open collector - - -5 V
VI Input voltage positive - - 5 V
VI Input voltage negative - - -10 V
Ptot Total power dissipation Tamb 25 C [1] - - 250 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance junction to ambient [1] - - 500 K/W
ICEO Collector-emitter cut-off current VCE = -50 V; IB = 0 A; Tamb = 25 C - - -0.5 A
ICBO Collector-base cut-off current VCB = -40 V; IE = 0 A; Tamb = 25 C - - -100 nA
ICBO Collector-base cut-off current VCB = -50 V; IE = 0 A; Tamb = 25 C - - -100 nA
IEBO Emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 C - - -0.8 mA
hFE DC current gain VCE = -5 V; IC = -50 mA; Tamb = 25 C 70 - - -
VCEsat Collector-emitter saturation voltage IC = -50 mA; IB = -2.5 mA; Tamb = 25 C - - -300 mV
VI(off) Off-state input voltage VCE = -5 V; IC = -100 A; Tamb = 25 C -0.3 -0.6 -1 V
VI(on) On-state input voltage VCE = -0.3 V; IC = -20 mA; Tamb = 25 C -0.4 -0.8 -1.4 V
Cc Collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 100 MHz; Tamb = 25 C - 11 - pF

2410010332_Nexperia-PDTB113ZT-215_C194134.pdf

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