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quality switching transistor pair Nexperia BC847BS115 in SOT363 package offering low collector capacitance factory
quality switching transistor pair Nexperia BC847BS115 in SOT363 package offering low collector capacitance factory

switching transistor pair Nexperia BC847BS115 in SOT363 package offering low collector capacitance

Key Attributes
Model Number: BC847BS,115
Product Custom Attributes
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
BC847BS,115
Package:
TSSOP-6(SOT-363)
Product Description

Product Overview

The Nexperia BC847BS is an NPN/NPN general-purpose transistor pair designed for a wide range of switching and amplification applications. Housed in a compact SOT363 (SC-88) SMD plastic package, this device offers low collector capacitance and low collector-emitter saturation voltage. Its closely matched current gain and lack of mutual interference between transistors contribute to reduced component count and smaller board space. The complementary PNP/PNP transistor is the BC857BS.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT363 (SC-88)
  • Material: Plastic
  • Qualification: Non-automotive

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO Collector-emitter voltage Open base - - 45 V
IC Collector current - - - 100 mA
hFE DC current gain VCE = 5 V; IC = 2 mA; Tamb = 25 C 200 - 450 -
VCBO Collector-base voltage Open emitter - - 50 V
VEBO Emitter-base voltage Open collector - - 5 V
ICM Peak collector current - - - 200 mA
IBM Peak base current Single pulse; tp 1 ms - - 200 mA
Ptot Total power dissipation Tamb 25 C [1] - - 220 mW
Ptot Total power dissipation Tamb 25 C [2] - - 250 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient in free air [1] - - 568 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air [2] - - 416 K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A; Tamb = 25 C 45 - - V
V(BR)EBO Emitter-base breakdown voltage IC = 0 A; IE = 100 A; Tamb = 25 C 5 - - V
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A; Tamb = 25 C - - 15 nA
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 100 nA
hFE DC current gain IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - - 100 -
VCEsat Collector-emitter saturation voltage IC = 100 mA; IB = 5 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - 300 mV
VBEsat Base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - 580 700 mV
VBE Base-emitter voltage VCE = 5 V; IC = 2 mA; Tamb = 25 C - 655 - mV
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 1.5 pF
Ce Emitter capacitance VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 C - 11 - pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C 100 - - MHz
Package Dimensions (mm)
Package Length Width Height Pitch Body -
TSSOP6 (SOT363) 2.1 1.25 0.95 0.65 - -

[1] Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated, mounting pad for collector 1 cm.


2410121947_Nexperia-BC847BS-115_C8653.pdf

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