Nexperia PBSS306NZ135 NPN transistor 100 volt 5.1 amp low saturation voltage transistor SOT223 package

Name: Nexperia PBSS306NZ135 NPN transistor 100 volt 5.1 amp low saturation voltage transistor SOT223 package
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: PBSS306NZ,135
Availability: InStock

Key Attributes

Model Number: PBSS306NZ,135

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

100nA

Pd - Power Dissipation:

1.7W

Transition Frequency(fT):

110MHz

Type:

NPN

Current - Collector(Ic):

5.1A

Collector - Emitter Voltage VCEO:

100V

Operating Temperature:

-65℃~+150℃

Mfr. Part #:

PBSS306NZ,135

Package:

SOT-223

Product Description

Nexperia PBSS306NZ: 100 V, 5.1 A NPN Low VCEsat (BISS) Transistor

The Nexperia PBSS306NZ is an NPN low VCEsat Breakthrough In Small Signal (BISS) transistor housed in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. This transistor offers a low collector-emitter saturation voltage (VCEsat), high collector current capability (IC and ICM), and high collector current gain (hFE) at high IC. Its design contributes to high efficiency through reduced heat generation and requires a smaller Printed-Circuit Board (PCB) area compared to conventional transistors.

Key Features

Low collector-emitter saturation voltage (VCEsat)
High collector current capability (IC and ICM)
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area

Applications

High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g., motors, fans)
Automotive applications

Product Attributes

Brand: Nexperia
Package Type: SOT223 (SC-73)
Transistor Type: NPN
Technology: Low VCEsat Breakthrough In Small Signal (BISS)
PNP Complement: PBSS306PZ

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
VCEO	Collector-emitter voltage	Open base	-	-	100	V
IC	Collector current	-	-	-	5.1	A
ICM	Peak collector current	Single pulse; tp 1 ms	-	-	10.2	A
RCEsat	Collector-emitter saturation resistance	IC = 4 A; IB = 200 mA [1]	-	43	60	m
VCBO	Collector-base voltage	Open emitter	-	-	100	V
VEBO	Emitter-base voltage	Open collector	-	-	5	V
Ptot	Total power dissipation	Tamb 25 C [1]	-	-	0.7	W
Ptot	Total power dissipation	Tamb 25 C [2]	-	-	1.7	W
Ptot	Total power dissipation	Tamb 25 C [3]	-	-	2.0	W
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-	-65	-	+150	C
Tstg	Storage temperature	-	-65	-	+150	C
Rth(j-a)	Thermal resistance junction to ambient	[1]	-	-	179	K/W
Rth(j-a)	Thermal resistance junction to ambient	[2]	-	-	74	K/W
Rth(j-a)	Thermal resistance junction to ambient	[3]	-	-	63	K/W
Rth(j-sp)	Thermal resistance junction to solder point	-	-	-	15	K/W
hFE	DC current gain	VCE = 2 V; IC = 0.5 A [1]	200	330	-	-
hFE	DC current gain	VCE = 2 V; IC = 1 A [1]	150	270	-	-
hFE	DC current gain	VCE = 2 V; IC = 2 A [1]	100	175	-	-
hFE	DC current gain	VCE = 2 V; IC = 4 A [1]	50	85	-	-
hFE	DC current gain	VCE = 2 V; IC = 5 A [1]	30	60	-	-
VCEsat	Collector-emitter saturation voltage	IC = 0.5 A; IB = 50 mA [1]	-	27	40	mV
VCEsat	Collector-emitter saturation voltage	IC = 1 A; IB = 50 mA [1]	-	53	75	mV
VCEsat	Collector-emitter saturation voltage	IC = 1 A; IB = 10 mA [1]	-	100	150	mV
VCEsat	Collector-emitter saturation voltage	IC = 2 A; IB = 40 mA [1]	-	115	165	mV
VCEsat	Collector-emitter saturation voltage	IC = 4 A; IB = 200 mA [1]	-	170	240	mV
VCEsat	Collector-emitter saturation voltage	IC = 4 A; IB = 400 mA [1]	-	155	220	mV
VCEsat	Collector-emitter saturation voltage	IC = 5.1 A; IB = 255 mA [1]	-	215	300	mV
VBEsat	Base-emitter saturation voltage	IC = 1 A; IB = 100 mA [1]	-	0.81	0.9	V
VBEsat	Base-emitter saturation voltage	IC = 4 A; IB = 400 mA [1]	-	0.94	1.05	V
VBEon	Base-emitter turn-on voltage	VCE = 2 V; IC = 2 A [1]	-	0.78	0.85	V
td	Delay time	VCC = 12.5 V; IC = 3 A; IBon = 0.15 A; IBoff = 0.15 A	-	15	-	ns
tr	Rise time	-	-	315	-	ns
ton	Turn-on time	-	-	330	-	ns
ts	Storage time	-	-	240	-	ns
tf	Fall time	-	-	290	-	ns
toff	Turn-off time	-	-	530	-	ns
fT	Transition frequency	VCE = 10 V; IC = 100 mA; f = 100 MHz	-	110	-	MHz
Cc	Collector capacitance	VCB = 10 V; IE = 0 A; f = 1 MHz	-	23	40	pF

[1] Pulse test: tp 300 s; 0.02.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

Ordering Information

Type Number	Package Name	Description
PBSS306NZ	SC-73	Plastic surface-mounted package with increased heatsink; 4 leads SOT223

Marking

Type Number	Marking Code
PBSS306NZ	S306NZ

Package Outline

SOT223 (SC-73)

Dimensions in mm:
Length: 6.3 to 6.7
Width: 2.9 to 3.1
Height: 1.5 to 1.8
Lead spacing: 4.6 to 7.3

Packing Information

Type Number	Package	Description	Packing Quantity
PBSS306NZ	SOT223	8 mm pitch, 12 mm tape and reel	1000 / 4000

For more information, please visit: www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com

2410121715_Nexperia-PBSS306NZ-135_C478130.pdf

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Nexperia PBSS306NZ135 NPN transistor 100 volt 5.1 amp low saturation voltage transistor SOT223 package