Nexperia PBHV8550XF NPN transistor 500 volt 150 milliamp high voltage low VCEsat for automotive applications
Key Attributes
Model Number:
PBHV8550XF
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
520mW
Transition Frequency(fT):
35MHz
Type:
NPN
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
500V
Operating Temperature:
-
Mfr. Part #:
PBHV8550XF
Package:
SOT-89
Product Description
Product Overview
The Nexperia PBHV8550X is a 500 V, 150 mA NPN high-voltage, low VCEsat (BISS) transistor designed for medium power applications. It features a breakthrough in small signal performance with a low collector-emitter saturation voltage (VCEsat), high collector current capability (IC and ICM), and high collector current gain (hFE) at high IC. This transistor is AEC-Q101 qualified, making it suitable for automotive applications. Its primary uses include electronic ballasts, LED drivers for LED chain modules, LCD backlighting, automotive motor management, flyback converters, and Switch Mode Power Supplies (SMPS).
Product Attributes
- Brand: Nexperia
- Type: NPN Transistor
- Technology: Breakthrough In Small Signal (BISS)
- Qualification: AEC-Q101 Qualified
- Package Type: SOT89 (SC-62)
- Lead Style: Flat lead Surface-Mounted Device (SMD)
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | 500 | V |
| IC | Collector current | - | - | - | 150 | mA |
| hFE | DC current gain | VCE = 10 V; IC = 30 mA; Tamb = 25 C | 50 | 100 | - | - |
| VCBO | Collector-base voltage | Open emitter | - | - | 500 | V |
| VCESM | Collector-emitter peak voltage | VBE = 0 V | - | - | 500 | V |
| VEBO | Emitter-base voltage | Collector open | - | - | 6 | V |
| ICM | Peak collector current | - | - | - | 0.5 | A |
| IBM | Peak base current | Single pulse; tp 1 ms | - | - | 200 | mA |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 520 | mW |
| Ptot | Total power dissipation | Tamb 25 C [2] | - | - | 1.5 | W |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -55 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance junction to ambient | In free air [1] | - | - | 241 | K/W |
| Rth(j-sp) | Thermal resistance junction to solder point | [2] | - | - | 84 | K/W |
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A; Tamb = 25 C | 500 | - | - | V |
| V(BR)CES | Collector-emitter breakdown voltage (base shorted) | IC = 2.5 mA; VBE = 0 V; Tamb = 25 C | 500 | - | - | V |
| V(BR)EBO | Emitter-base breakdown voltage (collector open) | IE = 100 A; IC = 0 A; Tamb = 25 C | 6 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 360 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICBO | Collector-base cut-off current | VCB = 360 V; IE = 0 A; Tj = 150 C | - | - | 50 | A |
| ICES | Collector-emitter cut-off current | VCE = 360 V; VBE = 0 V; Tamb = 25 C | - | - | 100 | nA |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 100 | nA |
| hFE | DC current gain | VCE = 10 V; IC = 30 mA; Tamb = 25 C | 50 | 100 | - | - |
| hFE | DC current gain | VCE = 10 V; IC = 50 mA; tp 300 s; pulsed; 0.02; Tamb = 25 C | 50 | 100 | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 20 mA; IB = 2 mA; Tamb = 25 C | - | 60 | 75 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 50 mA; IB = 6 mA; tp 300 s; pulsed; 0.02; Tamb = 25 C | - | 65 | 90 | mV |
| VBEsat | Base-emitter saturation voltage | IC = 50 mA; IB = 5 mA; tp 300 s; pulsed; 0.02; Tamb = 25 C | - | 0.75 | 0.9 | V |
| td | Delay time | - | - | 80 | - | ns |
| tr | Rise time | - | - | 2700 | - | ns |
| ton | Turn-on time | - | - | 2780 | - | ns |
| ts | Storage time | - | - | 3400 | - | ns |
| tf | Fall time | - | - | 800 | - | ns |
| toff | Turn-off time | VCC = 20 V; IC = 0.05 A; IBon = 5 mA; IBoff = -5 mA; Tamb = 25 C | - | 4200 | - | ns |
| fT | Transition frequency | VCE = 10 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C | - | 35 | - | MHz |
| Cc | Collector capacitance | VCB = 20 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 4 | pF |
| Ce | Emitter capacitance | VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 200 | pF |
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 6 cm.
2411121106_Nexperia-PBHV8550XF_C3200433.pdf
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