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quality digital transistor Nexperia PDTC123TT 215 with 100 mA output current and built in bias resistors factory
quality digital transistor Nexperia PDTC123TT 215 with 100 mA output current and built in bias resistors factory

digital transistor Nexperia PDTC123TT 215 with 100 mA output current and built in bias resistors

Key Attributes
Model Number: PDTC123TT,215
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
2.2kΩ
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTC123TT,215
Package:
SOT-23
Product Description

Product Overview

The PDTC123T series comprises NPN resistor-equipped transistors (RET) in Surface Mounted Device (SMD) plastic packages. These devices integrate built-in bias resistors, reducing component count, simplifying circuit design, and lowering pick-and-place costs. With a 100 mA output current capability, they are suitable for digital applications and serve as a cost-saving alternative for the BC847 series in digital contexts. Key applications include controlling IC inputs and switching loads.

Product Attributes

  • Brand: Nexperia (formerly Philips Semiconductors)
  • Type: NPN Resistor-Equipped Transistor (RET)
  • Resistor Configuration: R1 = 2.2 k, R2 = open

Technical Specifications

Type Number Package Name Description VCEO (V) IO (mA) R1 Bias Resistor (k) Marking Code
PDTC123TE SOT416 (SC-75) Plastic surface mounted package; 3 leads 50 100 2.2 (Typ) 2B
PDTC123TK SOT346 (SC-59A/TO-236) Plastic surface mounted package; 3 leads 50 100 2.2 (Typ) GB
PDTC123TM SOT883 (SC-101) Leadless ultra small plastic package; 3 solder lands; body 1.0 0.6 0.5 mm 50 100 2.2 (Typ) FB
PDTC123TS SOT54 (SC-43A/TO-92) Plastic single-ended leaded (through hole) package; 3 leads 50 100 2.2 (Typ) TC123T
PDTC123TT SOT23 (TO-236AB) Plastic surface mounted package; 3 leads 50 100 2.2 (Typ) ZM*
PDTC123TU SOT323 (SC-70) Plastic surface mounted package; 3 leads 50 100 2.2 (Typ) *1T
Symbol Parameter Conditions Min Typ Max Unit
VCBO Collector-base voltage open emitter - - 50 V
VCEO Collector-emitter voltage open base - - 50 V
VEBO Emitter-base voltage open collector - - 5 V
IO Output current - - - 100 mA
ICM Peak collector current single pulse; tp 1 ms - - 100 mA
Rth(j-a) Thermal resistance junction to ambient in free air, SOT416 - - 833 K/W
Rth(j-a) Thermal resistance junction to ambient in free air, SOT346 - - 500 K/W
Rth(j-a) Thermal resistance junction to ambient in free air, SOT883 - - 500 K/W
Rth(j-a) Thermal resistance junction to ambient in free air, SOT54 - - 250 K/W
Rth(j-a) Thermal resistance junction to ambient in free air, SOT23 - - 500 K/W
Rth(j-a) Thermal resistance junction to ambient in free air, SOT323 - - 625 K/W
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 1 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA
hFE DC current gain VCE = 5 V; IC = 20 mA 30 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV
R1 Bias resistor 1 (input) - 1.54 2.2 2.86 k
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 2.5 pF

2411121132_Nexperia-PDTC123TT-215_C552184.pdf

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