Nexperia PBRN123YT215 resistor equipped NPN transistor for simplified circuit design and load switching
Key Attributes
Model Number:
PBRN123YT,215
Product Custom Attributes
Emitter-Base Voltage VEBO:
-
Output Voltage(VO(on)):
-
Input Resistor:
2.2kΩ
Resistor Ratio:
4.55
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
PBRN123YT,215
Package:
SOT-23
Product Description
Product Overview
The Nexperia PBRN123YT is an NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. It features a 600 mA output current capability and a low collector-emitter saturation voltage (VCEsat). The integrated bias resistors reduce component count, simplify circuit design, and lower pick-and-place costs. This device is suitable for switching loads and medium current peripheral driver applications.
Product Attributes
- Brand: Nexperia
- Product Type: NPN PB RET (Resistor-Equipped Transistor)
- Package Type: SOT23 (TO-236AB)
- Date of Release: 31 March 2021
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | 40 | V |
| IO | Output current | Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated and standard footprint. | - | - | 600 | mA |
| R1 | Bias resistor 1 | See section "Test information" for resistor calculation and test conditions | 1.54 | 2.2 | 2.86 | k |
| R2/R1 | Bias resistor ratio | See section "Test information" for resistor calculation and test conditions | 4.1 | 4.55 | 5 | - |
| VCBO | Collector-base voltage | Open emitter | - | - | 40 | V |
| VCEO | Collector-emitter voltage | Open base | - | - | 40 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 5 | V |
| VI | Input voltage | Positive | - | - | 22 | V |
| VI | Input voltage | Negative | - | -5 | - | V |
| IO | Output current | [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 m copper, tin-plated and standard footprint. | - | - | 600 | mA |
| IORM | Repetitive peak output current | tp 1 ms; 0.33 | - | - | 700 | mA |
| Ptot | Total power dissipation | Tamb 25 C [1] Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated, mounting pad for collector 1 cm2. | - | - | 250 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance from junction to ambient | In free air [1] Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated and standard footprint. | - | - | 500 | K/W |
| Rth(j-sp) | Thermal resistance from junction to solder point | [2] Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated, mounting pad for collector 1 cm2. | - | - | 338 | K/W |
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A; Tamb = 25 C | 40 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 10 mA; IB = 0 A; Tamb = 25 C | 40 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 30 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tamb = 25 C | - | - | 0.5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 0.65 | mA |
| hFE | DC current gain | VCE = 5 V; IC = 50 mA; Tamb = 25 C | 300 | 450 | - | - |
| hFE | DC current gain | VCE = 5 V; IC = 300 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 500 | 750 | - | - |
| hFE | DC current gain | VCE = 5 V; IC = 600 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 500 | 720 | - | - |
| hFE | DC current gain | VCE = 5 V; IC = 800 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 450 | 650 | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 50 mA; IB = 2.5 mA; Tamb = 25 C | - | 25 | 35 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 200 mA; IB = 10 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 60 | 85 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 500 mA; IB = 10 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 160 | 220 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 600 mA; IB = 6 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 270 | 550 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 800 mA; IB = 8 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 560 | 1150 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A; Tamb = 25 C | 0.4 | 0.6 | 1 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 20 mA; Tamb = 25 C | 0.5 | 0.8 | 1.4 | V |
| R1 | Bias resistor 1 | [1] See section "Test information" for resistor calculation and test conditions | 1.54 | 2.2 | 2.86 | k |
| R2/R1 | Bias resistor ratio | [1] See section "Test information" for resistor calculation and test conditions | 4.1 | 4.55 | 5 | - |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | 7 | - | pF |
2410121848_Nexperia-PBRN123YT-215_C513118.pdf
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