Nexperia PUMD30 115 transistor providing 100 milliamp output current in small footprint SMD packages

Key Attributes
Model Number: PUMD30,115
Product Custom Attributes
Input Resistor:
2.2kΩ
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMD30,115
Package:
TSSOP-6
Product Description

Product Overview

The PEMD30 and PUMD30 are NPN/PNP double resistor-equipped transistors (RET) designed for surface-mounted device (SMD) applications. These transistors feature built-in bias resistors (R1 = 2.2 k, R2 = open), which reduce component count, simplify circuit design, and lower pick-and-place costs. They are suitable for low-current peripheral driving, control of IC inputs, and switching loads, offering a cost-saving alternative for certain applications. Available in SOT666 and SOT363 packages, these devices provide an output current capability of 100 mA per transistor.

Product Attributes

  • Brand: Philips Semiconductors
  • Type: NPN/PNP double resistor-equipped transistors (RET)
  • Resistor Configuration: R1 = 2.2 k, R2 = open
  • Package Type: Surface-Mounted Device (SMD) plastic packages
  • Origin: Made in Hong Kong, Malaysia, or China (depending on marking code)

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit Notes
Per transistor; for the PNP transistor with negative polarity
VCEO Collector-emitter voltage Open base - - 50 V
IO Output current - - 100 mA
R1 Bias resistor 1 (input) 1.54 2.2 2.86 k
VCBO Collector-base voltage Open emitter - - 50 V In accordance with the Absolute Maximum Rating System (IEC 60134)
VCEO Collector-emitter voltage Open base - - 50 V In accordance with the Absolute Maximum Rating System (IEC 60134)
VEBO Emitter-base voltage Open collector - - 5 V In accordance with the Absolute Maximum Rating System (IEC 60134)
IO Output current - - 100 mA In accordance with the Absolute Maximum Rating System (IEC 60134)
ICM Peak collector current Single pulse; tp 1 ms - - 100 mA In accordance with the Absolute Maximum Rating System (IEC 60134)
Total power dissipation
Ptot Total power dissipation Tamb 25 C - - 200 mW SOT363 [1]; Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Ptot Total power dissipation Tamb 25 C - - 200 mW SOT666 [1][2]; Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Reow soldering is the only recommended soldering method.
Ptot Total power dissipation Tamb 25 C - - 300 mW Per device; SOT363 [1]; Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Ptot Total power dissipation Tamb 25 C - - 300 mW Per device; SOT666 [1][2]; Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Reow soldering is the only recommended soldering method.
Tstg Storage temperature -65 - +150 C In accordance with the Absolute Maximum Rating System (IEC 60134)
Tj Junction temperature - - 150 C In accordance with the Absolute Maximum Rating System (IEC 60134)
Tamb Ambient temperature -65 - +150 C In accordance with the Absolute Maximum Rating System (IEC 60134)
Thermal characteristics
Per transistor
Rth(j-a) Thermal resistance from junction to ambient In free air; SOT363 [1] - - 625 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Rth(j-a) Thermal resistance from junction to ambient In free air; SOT666 [1][2] - - 625 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Reow soldering is the only recommended soldering method.
Per device
Rth(j-a) Thermal resistance from junction to ambient In free air; SOT363 [1] - - 416 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Rth(j-a) Thermal resistance from junction to ambient In free air; SOT666 [1][2] - - 416 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Reow soldering is the only recommended soldering method.
Characteristics (Tamb = 25 C unless otherwise specied)
Per transistor; for the PNP transistor with negative polarity
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 1 A
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 50 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA
hFE DC current gain VCE = 5 V; IC = 20 mA 30 - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV
R1 Bias resistor 1 (input) 1.54 2.2 2.86 k
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 2.5 pF TR1 (NPN)
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 3 pF TR2 (PNP)
Product Types & Packages
Type number Package Name Description Version
PEMD30 SOT666 Plastic surface-mounted package; 6 leads
PUMD30 SOT363 SC-88 plastic surface-mounted package; 6 leads
Ordering Information
Type number Package Description Packing quantity Notes
PEMD30 SOT666 2 mm pitch, 8 mm tape and reel 3000 -315
PEMD30 SOT666 4 mm pitch, 8 mm tape and reel 4000 -115
PUMD30 SOT363 4 mm pitch, 8 mm tape and reel; T1 8000 -115
PUMD30 SOT363 4 mm pitch, 8 mm tape and reel; T2 10000 -125

2410121745_Nexperia-PUMD30-115_C461152.pdf

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