86--136 6733 2386
quality Nexperia BC817DPN 115 NPN PNP transistor general purpose double transistor in compact SOT457 package factory
quality Nexperia BC817DPN 115 NPN PNP transistor general purpose double transistor in compact SOT457 package factory

Nexperia BC817DPN 115 NPN PNP transistor general purpose double transistor in compact SOT457 package

Key Attributes
Model Number: BC817DPN,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
600mW
Transition Frequency(fT):
100MHz
Type:
NPN+PNP
Number:
1 NPN + 1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC817DPN,115
Package:
SC-74(TSOP-6)
Product Description

Product Overview

The Nexperia BC817DPN is an NPN/PNP general-purpose double transistor housed in an SOT457 (SC-74) plastic package. Designed for general-purpose switching and amplification, it offers reduced component count and lower pick and place costs. This device is AEC-Q101 qualified, making it suitable for automotive applications.

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN/PNP General Purpose Transistor
  • Package Type: SOT457 (SC-74)
  • Qualification: AEC-Q101 Qualified

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
VCEO Collector-emitter voltage Open base - - 45 V
IC Collector current - - - 500 mA
ICM Peak collector current Single pulse; tp 1 ms - - 1 A
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
hFE DC current gain VCE = 1 V; IC = 100 mA [1] 160 - 400 [1]
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
ICBO Collector-base cut-off current VCB = 20 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICBO Collector-base cut-off current VCB = 20 V; IE = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 100 nA
hFE DC current gain VCE = 1 V; IC = 100 mA [1] 160 - 400 -
hFE DC current gain VCE = 1 V; IC = 500 mA; Tamb = 25 C [1] 40 - - -
VCEsat Collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; Tamb = 25 C [1] - - 700 mV
VBE Base-emitter voltage VCE = 1 V; IC = 500 mA [1] [2] - - 1.2 V
NPN transistor
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - 5 - pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C 100 - - MHz
PNP transistor
Cc Collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - 9 - pF
fT Transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 C 80 - - MHz
Limiting values
VCBO Collector-base voltage Open emitter - - 50 V
VCEO Collector-emitter voltage Open base - - 45 V
VEBO Emitter-base voltage Open collector - - 5 V
IC Collector current - - - 500 mA
ICM Peak collector current - - - 1 A
IBM Peak base current Single pulse; tp 1 ms - - 200 mA
Ptot Total power dissipation Tamb 25 C [1] - - 370 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Per device
Ptot Total power dissipation Tamb 25 C [1] - - 600 mW
Thermal characteristics
Rth(j-a) Thermal resistance from junction to ambient In free air [1] - - 208 K/W

[1] Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin plated; mounting pad for collector 1 cm.

[2] VBE decreases by approximately -2 mV/k with increasing temperature.


2410121943_Nexperia-BC817DPN-115_C426778.pdf

Related Products
quality N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion factory
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
quality High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant factory
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
quality Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating factory
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
quality Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications factory
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.