Schottky Barrier Diode onsemi BAT54HT1G for High Speed Switching and Circuit Protection Applications
Key Attributes
Model Number:
BAT54HT1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600mA
Reverse Leakage Current (Ir):
2uA@25V
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
800mV@100mA
Current - Rectified:
200mA
Mfr. Part #:
BAT54HT1G
Package:
SOD-323
Product Description
Product Overview
These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. The miniature surface mount package is excellent for hand held and portable applications where space is limited.
Product Attributes
- Brand: ON Semiconductor
- Device Marking: JV
- PbFree Package: Available
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
| Reverse Breakdown Voltage (IR = 10 A) | V(BR)R | 30 | Volts | ||
| Total Capacitance (VR = 1.0 V, f = 1.0 MHz) | CT | 7.6 | 10 | pF | |
| Reverse Leakage (VR = 25 V) | IR | 0.5 | 2.0 | Adc | |
| Forward Voltage (IF = 0.1 mAdc) | VF | 0.22 | 0.24 | Vdc | |
| Forward Voltage (IF = 30 mAdc) | VF | 0.41 | 0.5 | Vdc | |
| Forward Voltage (IF = 100 mAdc) | VF | 0.52 | 0.8 | Vdc | |
| Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) | trr | 5.0 | ns | ||
| Forward Voltage (IF = 1.0 mAdc) | VF | 0.29 | 0.32 | Vdc | |
| Forward Voltage (IF = 10 mAdc) | VF | 0.35 | 0.40 | Vdc | |
| Forward Current (DC) | IF | 200 | mAdc | ||
| Repetitive Peak Forward Current | IFRM | 300 | mAdc | ||
| NonRepetitive Peak Forward Current (t < 1.0 s) | IFSM | 600 | mAdc |
| Rating | Symbol | Value | Unit |
| Reverse Voltage | VR | 30 | V |
| Characteristic | Symbol | Max | Unit |
| Total Device Dissipation FR5 Board, (Note 1) TA = 25C | PD | 200 | mW |
| Derate above 25C | 1.57 | mW/C | |
| Thermal Resistance, JunctiontoAmbient | R JA | 635 | C/W |
| Junction and Storage Temperature | TJ, Tstg | 55 to150 | C |
2409302135_onsemi-BAT54HT1G_C21107.pdf
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