npn transistor in sot89 package for power management and inductive load driving Nexperia PBSS4350X115
Key Attributes
Model Number:
PBSS4350X,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50uA
Pd - Power Dissipation:
1.6W
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PBSS4350X,115
Package:
SOT-89
Product Description
Product Overview
The Nexperia PBSS4350X is a 50 V, 3 A NPN low VCEsat transistor housed in a SOT89 plastic package. This device offers a low collector-emitter saturation voltage (VCEsat) and high collector current capability, leading to increased efficiency and reduced heat generation. Its features make it suitable for power management, DC/DC converters, supply line switching, battery chargers, LCD backlighting, peripheral drivers, and inductive load drivers such as relays, buzzers, and motors. The PBSS4350X is AEC-Q101 qualified, making it suitable for automotive applications.
Product Attributes
- Brand: Nexperia
- Package Type: SOT89 (SC-62)
- Technology: NPN low VCEsat transistor
- Complementary Device: PBSS5350X (PNP)
- Qualification: AEC-Q101 qualified
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCBO | Collector-base voltage | open emitter | - | - | 50 | V |
| IC | Collector current | - | - | - | 3 | A |
| ICM | Peak collector current | limited by Tj(max) | - | - | 5 | A |
| RCEsat | Collector-emitter saturation resistance | IC = 2 A; IB = 200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 100 | 130 | m |
| VCBO | Collector-base voltage | open emitter | - | - | 50 | V |
| VCEO | Collector-emitter voltage | open base | - | - | 50 | V |
| VEBO | Emitter-base voltage | open collector | - | - | 5 | V |
| IC | Collector current | - | - | - | 3 | A |
| ICM | Peak collector current | limited by Tj(max) | - | - | 5 | A |
| IB | Base current | - | - | - | 0.5 | A |
| Ptot | Total power dissipation | Tamb 25 C (device on FR4 PCB, single-sided copper, tin-plated, standard footprint) | - | - | 550 | mW |
| Ptot | Total power dissipation | Tamb 25 C (device on FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm) | - | - | 1 | W |
| Ptot | Total power dissipation | Tamb 25 C (device on FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm) | - | - | 1.4 | W |
| Ptot | Total power dissipation | Tamb 25 C (device on ceramic PCB 7 cm, single-sided copper, tin-plated) | - | - | 1.6 | W |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance from junction to ambient in free air | (device on FR4 PCB, single-sided copper, tin-plated and standard footprint) | - | - | 225 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient in free air | (device on FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm) | - | - | 125 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient in free air | (device on FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm) | - | - | 90 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient in free air | (device on ceramic PCB 7 cm, single-sided copper, tin-plated) | - | - | 80 | K/W |
| Rth(j-sp) | Thermal resistance from junction to solder point | - | - | - | 16 | K/W |
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A; Tamb = 25 C | 50 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 10 mA; IB = 0 A; Tamb = 25 C | 50 | - | - | V |
| V(BR)EBO | Emitter-base breakdown voltage | (collector open) IE = 100 A; IC = 0 A; Tamb = 25 C | 5 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A; Tj = 150 C | - | - | 50 | A |
| ICES | Collector-emitter cut-off current | VCE = 50 V; VBE = 0 V; Tamb = 25 C | - | - | 100 | nA |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 100 | nA |
| VCEsat | Collector-emitter saturation voltage | VCE = 2 V; IC = 0.1 A; pulsed; tp 300 s; 2; Tamb = 25 C | 300 | - | - | mV |
| VCEsat | Collector-emitter saturation voltage | VCE = 2 V; IC = 0.5 A; pulsed; tp 300 s; 0.02; Tamb = 25 C | 300 | - | - | mV |
| VCEsat | Collector-emitter saturation voltage | VCE = 2 V; IC = 1 A; pulsed; tp 300 s; 0.02; Tamb = 25 C | 300 | - | 700 | mV |
| VCEsat | Collector-emitter saturation voltage | VCE = 2 V; IC = 2 A; pulsed; tp 300 s; 0.02; Tamb = 25 C | 200 | - | - | mV |
| hFE | DC current gain | VCE = 2 V; IC = 3 A; pulsed; tp 300 s; 0.02; Tamb = 25 C | 100 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 0.5 A; IB = 50 mA; Tamb = 25 C | - | - | 80 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 1 A; IB = 50 mA; Tamb = 25 C | - | - | 160 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 2 A; IB = 100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | 280 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 2 A; IB = 200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | 260 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 3 A; IB = 300 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | 370 | mV |
| RCEsat | Collector-emitter saturation resistance | IC = 2 A; IB = 200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 100 | 130 | m |
| VCEsat | Collector-emitter saturation voltage | IC = 2 A; IB = 100 mA; Tamb = 25 C | - | - | 1.1 | V |
| VBEsat | Base-emitter saturation voltage | IC = 3 A; IB = 300 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | - | 1.2 | V |
| VBEon | Base-emitter turn-on voltage | VCE = 2 V; IC = 1 A; Tamb = 25 C | - | - | 1.1 | V |
| fT | Transition frequency | VCE = 5 V; IC = 100 mA; f = 100 MHz; Tamb = 25 C | 100 | - | - | MHz |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 25 | pF |
Pinning Information
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | E | emitter | 3 2 1 | SOT89 sym123 C E B |
| 2 | C | collector | ||
| 3 | B | base |
Ordering Information
| Package Type | Number | Name | Description | Version |
|---|---|---|---|---|
| SOT89 | PBSS4350X | SOT89 | plastic, surface-mounted package; 3 leads; 1.5 mm pitch; 4.5 mm x 2.5 mm x 1.5 mm body | SOT89 |
Marking
| Type number | Marking code |
|---|---|
| PBSS4350X | S43 |
2410121833_Nexperia-PBSS4350X-115_C135818.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
