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quality General purpose transistor Nexperia PDTC115EM 315 NPN resistor equipped with built in bias resistors factory
quality General purpose transistor Nexperia PDTC115EM 315 NPN resistor equipped with built in bias resistors factory

General purpose transistor Nexperia PDTC115EM 315 NPN resistor equipped with built in bias resistors

Key Attributes
Model Number: PDTC115EM,315
Product Custom Attributes
Input Resistor:
130kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTC115EM,315
Package:
SOT-883-3
Product Description

Product Overview

The PDTC115E series NPN resistor-equipped transistors from Nexperia are designed for general-purpose switching and amplification, inverter and interface circuits, and circuit drivers. These transistors feature built-in bias resistors (R1 = 100 k, R2 = 100 k), simplifying circuit design, reducing component count, and lowering pick and place costs.

Product Attributes

  • Brand: Nexperia
  • Type: NPN resistor-equipped transistors
  • Origin: Made in Hong Kong, Malaysia, or China (depending on marking code)

Technical Specifications

Model Package Marking Code PNP Complement VCEO (Max) IO (DC) (Max) R1 (Typ) R2 (Typ)
PDTC115EE SOT416 (SC-75) 46 PDTA115EE -50 V -20 mA 100 k 100 k
PDTC115EEF SOT490 (SC-89) 49 PDTA115EEF -50 V -20 mA 100 k 100 k
PDTC115EK SOT346 (SC-59) 56 PDTA115EK -50 V -20 mA 100 k 100 k
PDTC115EM SOT883 (SC-101) DV PDTA115EM -50 V -20 mA 100 k 100 k
PDTC115ES SOT54 (TO-92) TC115E PDTA115ES -50 V -20 mA 100 k 100 k
PDTC115ET SOT23 *44(1) PDTA115ET -50 V -20 mA 100 k 100 k
PDTC115EU SOT323 (SC-70) *15(1) PDTA115EU -50 V -20 mA 100 k 100 k
Parameter Condition Min. Typ. Max. Unit
Collector-base voltage (VCBO) Open emitter - - -50 V
Collector-emitter voltage (VCEO) Open base - - -50 V
Emitter-base voltage (VEBO) Open collector - - -10 V
Input voltage (VI) Positive - - +40 V
Input voltage (VI) Negative - - -10 V
Output current (DC) (IO) - - - 20 mA
Peak collector current (ICM) - - - 100 mA
Total power dissipation (Ptot) Tamb 25 C (SOT54) - - 500 mW
Total power dissipation (Ptot) Tamb 25 C (SOT23) - - 250 mW
Total power dissipation (Ptot) Tamb 25 C (SOT346) - - 250 mW
Total power dissipation (Ptot) Tamb 25 C (SOT323) - - 200 mW
Total power dissipation (Ptot) Tamb 25 C (SOT416) - - 150 mW
Total power dissipation (Ptot) Tamb 25 C (SOT883) - - 250 mW
Total power dissipation (Ptot) Tamb 25 C (SOT490) - - 250 mW
Storage temperature (Tstg) - -65 - +150 C
Junction temperature (Tj) - - - 150 C
Operating ambient temperature (Tamb) - -65 - +150 C
Collector-base cut-off current (ICBO) VCB = 50 V; IE = 0 A - - 100 nA
Collector-emitter cut-off current (ICEO) VCE = 30 V; IB = 0 A - - 1 A
Collector-emitter cut-off current (ICEO) VCE = 30 V; IB = 0 A; Tj = 150 C - - 50 A
Emitter-base cut-off current (IEBO) VEB = 5 V; IC = 0 A - - 50 A
DC current gain (hFE) VCE = 5 V; IC = 5 mA 80 - - -
Collector-emitter saturation voltage (VCEsat) IC = 5 mA; IB = 0.25 mA - - 150 mV
Input-off voltage (Vi(off)) IC = 100 A; VCE = 5 V - 1.1 0.5 V
Input-on voltage (Vi(on)) IC = 1 mA; VCE = 0.3 V 3 1.5 - V
Input resistor (R1) - 70 100 130 k
Collector capacitance (Cc) IE = ie = 0 A; VCB = 10 V; f = 1 MHz - - 2.5 pF

2410121948_Nexperia-PDTC115EM-315_C552164.pdf

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