Nexperia PBLS6003D 115 60 Volt 1 Amp PNP Loadswith Double Transistor in Compact SOT457 SC74 Package
Key Attributes
Model Number:
PBLS6003D,115
Product Custom Attributes
Input Resistor:
10kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
60V;50V
Mfr. Part #:
PBLS6003D,115
Package:
SOT-457
Product Description
Product Overview
The Nexperia PBLS6003D is a 60 V, 1 A PNP loadswitch double transistor designed for efficient supply line switching and battery charger applications. This space-saving solution integrates a low VCEsat PNP transistor and an NPN Resistor-Equipped Transistor (RET) in a compact SOT457 (SC-74) SMD plastic package. It offers a low threshold voltage (< 1 V) compared to MOSFETs, requiring low drive power and reducing component count. The PBLS6003D is AEC-Q101 qualified, making it suitable for high-side switching of LEDs, drivers, backlights, and portable equipment.
Product Attributes
- Brand: Nexperia
- Package Type: SOT457 (SC-74)
- Certification: AEC-Q101 qualified
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| TR1; PNP low VCEsat transistor | ||||||
| VCEO | Collector-emitter voltage (open base) | - | - | -60 | V | |
| IC | Collector current | [1] | - | - | -1 | A |
| RCEsat | Collector-emitter saturation resistance | IC = -1 A; IB = -100 mA; Tamb = 25 C; pulsed; tp 300 s; factor 0.02 | - | 255 | 340 | m |
| VCBO | Collector-base voltage (open emitter) | - | - | -80 | V | |
| VEBO | Emitter-base voltage (open collector) | - | - | -5 | V | |
| IC | Collector current | [1] | - | - | -700 | mA |
| IC | Collector current | [2] | - | - | -850 | mA |
| ICM | Peak collector current (single pulse; tp 1 ms) | - | - | -2 | A | |
| IB | Base current | - | - | -300 | mA | |
| IBM | Peak base current (single pulse; tp 1 ms) | - | - | -1 | A | |
| Ptot | Total power dissipation (Tamb 25 C) | [1] | - | - | 250 | mW |
| Ptot | Total power dissipation (Tamb 25 C) | [2] | - | - | 350 | mW |
| Ptot | Total power dissipation (Tamb 25 C) | [3] | - | - | 400 | mW |
| RCEsat | Collector-emitter saturation resistance | IC = -1 A; IB = -100 mA; Tamb = 25 C; pulsed; tp 300 s; factor 0.02 | - | 255 | 340 | m |
| VBEsat | Base-emitter saturation voltage | IC = -1 A; IB = -50 mA; Tamb = 25 C; pulsed; tp 300 s; factor 0.02 | - | -0.95 | -1.1 | V |
| VBEon | Base-emitter turn-on voltage | VCE = -5 V; IC = -1 A; Tamb = 25 C; pulsed; tp 300 s; factor 0.02 | - | -0.82 | -0.9 | V |
| td | Delay time | - | 11 | - | ns | |
| tr | Rise time | - | 30 | - | ns | |
| ton | Turn-on time | - | 41 | - | ns | |
| ts | Storage time | - | 205 | - | ns | |
| tf | Fall time | - | 55 | - | ns | |
| toff | Turn-off time | IC = -0.5 A; IBon = -25 mA; IBoff = 25 mA; Tamb = 25 C | - | 260 | - | ns |
| Cc | Collector capacitance | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | 9 | 15 | pF |
| fT | Transition frequency | VCE = -10 V; IC = -50 mA; f = 100 MHz; Tamb = 25 C | 150 | 185 | - | MHz |
| TR2; NPN resistor-equipped transistor | ||||||
| VCEO | Collector-emitter voltage (open base) | - | - | 50 | V | |
| IO | Output current | - | - | 100 | mA | |
| R1 | Bias resistor 1 (input) | 7 | 10 | 13 | k | |
| R2/R1 | Bias resistor ratio | 0.8 | 1 | 1.2 | ||
| VCBO | Collector-base voltage (open emitter) | - | - | 50 | V | |
| VCEO | Collector-emitter voltage (open base) | - | - | 50 | V | |
| VEBO | Emitter-base voltage (open collector) | - | - | 10 | V | |
| VI | Input voltage | -10 | - | 40 | V | |
| IO | Output current | - | - | 100 | mA | |
| ICM | Peak collector current | - | - | 100 | mA | |
| Ptot | Total power dissipation (Tamb 25 C) | [1] | - | - | 200 | mW |
| Ptot | Total power dissipation (Tamb 25 C) | [2] | - | - | 200 | mW |
| Ptot | Total power dissipation (Tamb 25 C) | [3] | - | - | 200 | mW |
| Ptot | Total power dissipation (Tamb 25 C) | Per device [1] | - | - | 400 | mW |
| Ptot | Total power dissipation (Tamb 25 C) | Per device [2] | - | - | 530 | mW |
| Ptot | Total power dissipation (Tamb 25 C) | Per device [3] | - | - | 600 | mW |
| Tj | Junction temperature | - | - | 150 | C | |
| Tamb | Ambient temperature | -65 | - | 150 | C | |
| Tstg | Storage temperature | -65 | - | 150 | C | |
| Rth(j-a) | Thermal resistance from junction to ambient (in free air) | [1] | - | - | 312 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient (in free air) | [2] | - | - | 236 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient (in free air) | [3] | - | - | 208 | K/W |
| Rth(j-sp) | Thermal resistance from junction to solder point | - | - | 105 | K/W | |
| ICBO | Collector-base cut-off current | VCB = -60 V; IE = 0 A; Tamb = 25 C | - | - | -100 | nA |
| ICBO | Collector-base cut-off current | VCB = -60 V; IE = 0 A; Tj = 150 C | - | - | -50 | A |
| ICES | Collector-emitter cut-off current | VCE = -60 V; VBE = 0 V; Tamb = 25 C | - | - | -100 | nA |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A; Tamb = 25 C | - | - | -100 | nA |
| hFE | DC current gain | VCE = -5 V; IC = -1 mA; Tamb = 25 C | 200 | 350 | - | |
| hFE | DC current gain | VCE = -5 V; IC = -500 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 150 | 230 | - | |
| hFE | DC current gain | VCE = -5 V; IC = -1 A; pulsed; tp 300 s; 0.02; Tamb = 25 C | 100 | 160 | - | |
| VCEsat | Collector-emitter saturation voltage | IC = -100 mA; IB = -1 mA; Tamb = 25 C | - | -110 | -175 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = -500 mA; IB = -50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | -135 | -180 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = -1 A; IB = -100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | -255 | -340 | mV |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 2.5 | pF |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tamb = 25 C | - | - | 1 | A |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 50 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 400 | A |
| hFE | DC current gain | VCE = 5 V; IC = 5 mA; Tamb = 25 C | 30 | - | - | |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA; Tamb = 25 C | - | - | 150 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A; Tamb = 25 C | - | 0.8 | 1.1 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 10 mA; Tamb = 25 C | 1.8 | 2.5 | - | V |
| R1 | Bias resistor 1 (input) | 7 | 10 | 13 | k | |
| R2/R1 | Bias resistor ratio | 0.8 | 1 | 1.2 | ||
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 2.5 | pF |
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
2410121850_Nexperia-PBLS6003D-115_C551805.pdf
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