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quality NPN NPN Resistor Equipped Double Transistor Nexperia PUMH9 115 50 V 100 mA Output Current Device factory
quality NPN NPN Resistor Equipped Double Transistor Nexperia PUMH9 115 50 V 100 mA Output Current Device factory

NPN NPN Resistor Equipped Double Transistor Nexperia PUMH9 115 50 V 100 mA Output Current Device

Key Attributes
Model Number: PUMH9,115
Product Custom Attributes
Input Resistor:
10kΩ
Resistor Ratio:
4.7
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMH9,115
Package:
TSSOP-6(SOT-363)
Product Description

Nexperia PUMH9: 50 V, 100 mA NPN/NPN Resistor-Equipped Double Transistor

Product Overview

The Nexperia PUMH9 is a high-performance NPN/NPN Resistor-Equipped Double Transistor (RET) designed for digital applications in automotive and industrial segments. Featuring built-in bias resistors (R1 = 10 k, R2 = 47 k), this device simplifies circuit design, reduces component count, and lowers pick and place costs. It offers a 100 mA output current capability and is an ideal cost-saving alternative for BC847 series in digital applications, suitable for controlling IC inputs and switching loads.

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN/NPN Resistor-Equipped Double Transistor (RET)
  • Package Type: TSSOP6 (SOT363)

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO Collector-emitter voltage Open base - - 50 V
IO Output current - - - 100 mA
R1 Bias resistor 1 (input) [1] 7 10 13 k
R2/R1 Bias resistor ratio [1] 3.7 4.7 5.7 -
VCBO Collector-base voltage Open emitter - - 50 V
VCEO Collector-emitter voltage Open base - - 50 V
VEBO Emitter-base voltage Open collector - - 6 V
VI Input voltage Positive - - 40 V
VI Input voltage Negative - - -6 V
IO Output current - - - 100 mA
Ptot Total power dissipation Tamb 25 C [1] - - 200 mW
Per device
Ptot Total power dissipation Tamb 25 C [1] - - 300 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -55 - 150 C
Tstg Storage temperature - -65 - 150 C
Thermal characteristics (Per transistor)
Rth(j-a) Thermal resistance from junction to ambient in free air [1] - - - 625 K/W
Thermal characteristics (Per device)
Rth(j-a) Thermal resistance from junction to ambient in free air [1] - - - 417 K/W
Characteristics (Tamb = 25 C unless otherwise specified)
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A 50 - - V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 150 A
hFE DC current gain VCE = 5 V; IC = 5 mA 100 - - -
VCEsat Collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA - - 100 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A - 0.7 0.5 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 1 mA 1.4 0.8 - V
R1 Bias resistor 1 (input) [1] 7 10 13 k
R2/R1 Bias resistor ratio [1] 3.7 4.7 5.7 -
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz - - 2.5 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz [2] - 230 - MHz

[1] See "Section 11: Test information" for resistor calculation and test conditions.

[2] Characteristics of built-in transistor

Package Information

Package Type: TSSOP6 (SOT363)

Body Dimensions: 2.1 mm x 1.25 mm x 0.95 mm

Pitch: 0.65 mm

Ordering Information

Type number: PUMH9

Marking

Marking code: H%9 (where % is a placeholder for manufacturing site code)


2410121943_Nexperia-PUMH9-115_C426876.pdf

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