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quality Compact resistor equipped double transistor Nexperia PUMH15 115 designed for low current applications factory
quality Compact resistor equipped double transistor Nexperia PUMH15 115 designed for low current applications factory

Compact resistor equipped double transistor Nexperia PUMH15 115 designed for low current applications

Key Attributes
Model Number: PUMH15,115
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
4.7kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMH15,115
Package:
TSSOP-6(SOT-363)
Product Description

Product Overview

The Nexperia PUMH15 is a highly integrated NPN/NPN resistor-equipped double transistor (RET) designed for efficient low-current peripheral driving and digital input control. Featuring built-in bias resistors, it simplifies circuit design, reduces component count, and lowers pick-and-place costs. This compact device is ideal for applications requiring simplified logic and interface circuits.

Product Attributes

  • Brand: Nexperia
  • Product Type: Resistor-Equipped Double Transistor (RET)
  • Configuration: NPN/NPN
  • Package Type: SOT363 (SC-88)

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO Collector-emitter voltage open base - - 50 V
IO Output current - - - 100 mA
R1 Bias resistor 1 (input) [1] 3.3 4.7 6.1 k
R2/R1 Bias resistor ratio Tamb = 25 C [1] 0.8 1 1.2 -
VCBO Collector-base voltage open emitter - - 50 V
VEBO Emitter-base voltage open collector - - 10 V
VI Input voltage positive - - 30 V
VI Input voltage negative - - -10 V
IO Output current - - - 100 mA
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Per device
Ptot Total power dissipation Tamb 25 C [1] - - 200 mW
Ptot Total power dissipation Tamb = 25 C [1] - - 300 mW
Thermal characteristics
Rth(j-a) Thermal resistance from junction to ambient in free air [1] - - 625 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air [1] - - 417 K/W
Characteristics
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A; Tamb = 25 C 50 - - V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tamb = 25 C - - 1 A
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 900 A
hFE DC current gain VCE = 5 V; IC = 10 mA; Tamb = 25 C 30 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - - 150 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A; Tamb = 25 C - 1.1 0.5 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 20 mA; Tamb = 25 C 2.5 1.9 - V
R1 Bias resistor 1 (input) [1] 3.3 4.7 6.1 k
R2/R1 Bias resistor ratio Tamb = 25 C [1] 0.8 1 1.2 -
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 2.5 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C [2] - 230 - MHz

[1] See "Section 11: Test information" for resistor calculation and test conditions.

[2] Characteristics of built-in transistor.


2410121948_Nexperia-PUMH15-115_C553532.pdf

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