Nexperia PUMH11 115 resistor equipped double transistor with 50 volt collector emitter voltage rating
Key Attributes
Model Number:
PUMH11,115
Product Custom Attributes
Input Resistor:
10kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMH11,115
Package:
TSSOP-6(SOT-363)
Product Description
Product Overview
The Nexperia PUMH11 is a resistor-equipped double transistor (RET) featuring two NPN transistors in a compact SOT363 (SC-88) SMD plastic package. It offers a 100 mA output current capability and integrates built-in bias resistors, simplifying circuit design and reducing component count. This device is ideal for low-current peripheral driving, controlling IC inputs, and replacing general-purpose transistors in digital applications.
Product Attributes
- Brand: Nexperia
- Type: NPN/NPN double Resistor-Equipped Transistor (RET)
- Complementary NPN/PNP: PUMD3
- Complementary PNP/PNP: PUMB11
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor | ||||||
| VCEO | Collector-emitter voltage | Open base | - | - | 50 | V |
| IO | Output current | - | - | - | 100 | mA |
| R1 | Bias resistor 1 (input) | [1] | 7 | 10 | 13 | k |
| R2/R1 | Bias resistor ratio | [1] | 0.8 | 1 | 1.2 | - |
| VCBO | Collector-base voltage | Open emitter | - | - | 50 | V |
| VCEO | Collector-emitter voltage | Open base | - | - | 50 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 10 | V |
| VI | Input voltage | Positive | - | - | 40 | V |
| VI | Input voltage | Negative | - | -10 | - | V |
| IO | Output current | - | - | - | 100 | mA |
| Total power dissipation | ||||||
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 200 | mW |
| Ptot | Total power dissipation | Tamb = 25 C [1] | - | - | 300 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Thermal characteristics | ||||||
| Rth(j-a) | Thermal resistance junction to ambient | In free air [1] | - | - | 625 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | In free air [1] | - | - | 417 | K/W |
| Characteristics (Tamb = 25 C unless otherwise specified) | ||||||
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A; Tamb = 25 C | 50 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 2 mA; IB = 0 A; Tamb = 25 C | 50 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A | - | - | 1 | A |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A | - | - | 400 | A |
| hFE | DC current gain | VCE = 5 V; IC = 5 mA | 30 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA | - | - | 150 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A | - | 1.1 | 0.8 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 10 mA | 2.5 | 1.8 | - | V |
| R1 | Bias resistor 1 (input) | [1] | 7 | 10 | 13 | k |
| R2/R1 | Bias resistor ratio | [1] | 0.8 | 1 | 1.2 | - |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz | - | - | 2.5 | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz [2] | - | 230 | - | MHz |
| Package outline | ||||||
| Package Type | Name | Description | Version | Body Dimensions (mm) | Pitch (mm) | Leads |
| TSSOP6 | SOT363 | Plastic, surface-mounted package | - | 2.1 x 1.25 x 0.95 | 0.65 | 6 |
[1] See "Section 11: Test information" for resistor calculation and test conditions.
[2] Characteristics of built-in transistor.
2410010303_Nexperia-PUMH11-115_C135827.pdf
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