Nexperia PDTC143ZT 215 NPN Transistor Featuring Internal Resistors and SOT23 Package for Circuit Design

Key Attributes
Model Number: PDTC143ZT,215
Product Custom Attributes
Input Resistor:
4.7kΩ
Resistor Ratio:
12
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTC143ZT,215
Package:
SOT-23
Product Description

Nexperia PDTC143Z Series NPN Resistor-Equipped Transistors

Product Overview

The Nexperia PDTC143Z series comprises NPN resistor-equipped transistors (RETs) in compact Surface-Mounted Device (SMD) plastic packages. These transistors feature built-in bias resistors (R1 = 4.7 k, R2 = 47 k), which reduce component count, simplify circuit design, and lower pick-and-place costs. With a 100 mA output current capability and AEC-Q101 qualification, they are ideal for digital applications in the automotive and industrial segments, serving as a cost-effective alternative to the BC847/857 series for IC input control and switching loads.

Product Attributes

  • Brand: Nexperia
  • Type: NPN Resistor-Equipped Transistor (RET)
  • Certifications: AEC-Q101 qualified
  • Internal Resistors: R1 = 4.7 k, R2 = 47 k

Technical Specifications

Model Package JEITA JEDEC VCEO (V) IO (mA) R1 (k) R2/R1 Ratio Marking Code
PDTC143ZE SOT416 SC-75 - 50 100 3.3 - 6.1 (4.7 Typ) 8 - 12 (10 Typ) 38
PDTC143ZM SOT883 SC-101 - 50 100 3.3 - 6.1 (4.7 Typ) 8 - 12 (10 Typ) E3
PDTC143ZT SOT23 - TO-236AB 50 100 3.3 - 6.1 (4.7 Typ) 8 - 12 (10 Typ) *18
PDTC143ZU SOT323 SC-70 - 50 100 3.3 - 6.1 (4.7 Typ) 8 - 12 (10 Typ) *54
Parameter Conditions Min Max Unit
Collector-emitter voltage (VCEO) Open base - 50 V
Output current (IO) - - 100 mA
Collector-base voltage (VCBO) Open emitter - 50 V
Emitter-base voltage (VEBO) Open collector - 5 V
Input voltage (VI) Positive - 30 V
Input voltage (VI) Negative -5 - V
Peak collector current (ICM) Single pulse; tp 1 ms - 100 mA
Total power dissipation (Ptot) Tamb 25 C (PDTC143ZE/SOT416) - 150 mW
Total power dissipation (Ptot) Tamb 25 C (PDTC143ZM/SOT883) - 250 mW
Total power dissipation (Ptot) Tamb 25 C (PDTC143ZT/SOT23) - 250 mW
Total power dissipation (Ptot) Tamb 25 C (PDTC143ZU/SOT323) - 200 mW
Junction temperature (Tj) - - 150 C
Ambient temperature (Tamb) - -65 +150 C
Storage temperature (Tstg) - -65 +150 C
Parameter Conditions Typical Unit
DC current gain (hFE) VCE = 5 V; IC = 10 mA 100 -
Collector-emitter saturation voltage (VCEsat) IC = 5 mA; IB = 0.25 mA - 100 mV
Off-state input voltage (VI(off)) VCE = 5 V; IC = 100 A 0.6 V
On-state input voltage (VI(on)) VCE = 0.3 V; IC = 5 mA 1.3 V
Collector capacitance (Cc) VCB = 10 V; IE = 0 A; f = 1 MHz - 2.5 pF
Transition frequency (fT) VCE = 5 V; IC = 10 mA; f = 100 MHz 230 MHz

2410121805_Nexperia-PDTC143ZT-215_C426852.pdf

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