Nexperia PDTC143ZT 215 NPN Transistor Featuring Internal Resistors and SOT23 Package for Circuit Design
Nexperia PDTC143Z Series NPN Resistor-Equipped Transistors
Product Overview
The Nexperia PDTC143Z series comprises NPN resistor-equipped transistors (RETs) in compact Surface-Mounted Device (SMD) plastic packages. These transistors feature built-in bias resistors (R1 = 4.7 k, R2 = 47 k), which reduce component count, simplify circuit design, and lower pick-and-place costs. With a 100 mA output current capability and AEC-Q101 qualification, they are ideal for digital applications in the automotive and industrial segments, serving as a cost-effective alternative to the BC847/857 series for IC input control and switching loads.
Product Attributes
- Brand: Nexperia
- Type: NPN Resistor-Equipped Transistor (RET)
- Certifications: AEC-Q101 qualified
- Internal Resistors: R1 = 4.7 k, R2 = 47 k
Technical Specifications
| Model | Package | JEITA | JEDEC | VCEO (V) | IO (mA) | R1 (k) | R2/R1 Ratio | Marking Code |
|---|---|---|---|---|---|---|---|---|
| PDTC143ZE | SOT416 | SC-75 | - | 50 | 100 | 3.3 - 6.1 (4.7 Typ) | 8 - 12 (10 Typ) | 38 |
| PDTC143ZM | SOT883 | SC-101 | - | 50 | 100 | 3.3 - 6.1 (4.7 Typ) | 8 - 12 (10 Typ) | E3 |
| PDTC143ZT | SOT23 | - | TO-236AB | 50 | 100 | 3.3 - 6.1 (4.7 Typ) | 8 - 12 (10 Typ) | *18 |
| PDTC143ZU | SOT323 | SC-70 | - | 50 | 100 | 3.3 - 6.1 (4.7 Typ) | 8 - 12 (10 Typ) | *54 |
| Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|
| Collector-emitter voltage (VCEO) | Open base | - | 50 | V |
| Output current (IO) | - | - | 100 | mA |
| Collector-base voltage (VCBO) | Open emitter | - | 50 | V |
| Emitter-base voltage (VEBO) | Open collector | - | 5 | V |
| Input voltage (VI) | Positive | - | 30 | V |
| Input voltage (VI) | Negative | -5 | - | V |
| Peak collector current (ICM) | Single pulse; tp 1 ms | - | 100 | mA |
| Total power dissipation (Ptot) | Tamb 25 C (PDTC143ZE/SOT416) | - | 150 | mW |
| Total power dissipation (Ptot) | Tamb 25 C (PDTC143ZM/SOT883) | - | 250 | mW |
| Total power dissipation (Ptot) | Tamb 25 C (PDTC143ZT/SOT23) | - | 250 | mW |
| Total power dissipation (Ptot) | Tamb 25 C (PDTC143ZU/SOT323) | - | 200 | mW |
| Junction temperature (Tj) | - | - | 150 | C |
| Ambient temperature (Tamb) | - | -65 | +150 | C |
| Storage temperature (Tstg) | - | -65 | +150 | C |
| Parameter | Conditions | Typical | Unit | |
|---|---|---|---|---|
| DC current gain (hFE) | VCE = 5 V; IC = 10 mA | 100 | - | |
| Collector-emitter saturation voltage (VCEsat) | IC = 5 mA; IB = 0.25 mA | - | 100 | mV |
| Off-state input voltage (VI(off)) | VCE = 5 V; IC = 100 A | 0.6 | V | |
| On-state input voltage (VI(on)) | VCE = 0.3 V; IC = 5 mA | 1.3 | V | |
| Collector capacitance (Cc) | VCB = 10 V; IE = 0 A; f = 1 MHz | - | 2.5 | pF |
| Transition frequency (fT) | VCE = 5 V; IC = 10 mA; f = 100 MHz | 230 | MHz |
2410121805_Nexperia-PDTC143ZT-215_C426852.pdf
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