High current onsemi FGH75T65SHDTL4 IGBT designed for UPS telecom ESS and solar inverter applications
Key Attributes
Model Number:
FGH75T65SHDTL4
Product Custom Attributes
Pd - Power Dissipation:
455W
Td(off):
189ns
Td(on):
48ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
43pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@75mA
Gate Charge(Qg):
126nC@15V
Pulsed Current- Forward(Ifm):
300A
Output Capacitance(Coes):
183pF
Reverse Recovery Time(trr):
76ns
Switching Energy(Eoff):
1.81mJ
Turn-On Energy (Eon):
1.06mJ
Mfr. Part #:
FGH75T65SHDTL4
Package:
TO-247-4LD
Product Description
Product Description
Utilizing novel field stop IGBT technology, ON Semiconductor's new series of field stop 3rd generation IGBTs offer optimum performance for solar inverter, UPS, welder, telecom, ESS, and PFC applications where low conduction and switching losses are essential. These IGBTs feature a maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, and low saturation voltage. They are 100% tested for ILM, possess high input impedance, fast switching, and tightened parameter distribution. This device is Pb-Free and RoHS Compliant, but reflow and full package dipping are not recommended.
Product Attributes
- Brand: ON Semiconductor
- Certifications: Pb-Free, RoHS Compliant
Technical Specifications
| Part Number | VCES (V) | IC (A) | TJ Max (C) | VCE(sat) Typ. (V) @ IC=75A | Application |
| FGH75T65SHDTL4 | 650 | 75 | 175 | 1.6 | Solar Inverter, UPS, Welder, Telecom, ESS, PFC |
| Symbol | Description | Test Conditions | Min | Typ | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| VCES | Collector to Emitter Voltage | 650 | V | |||
| VGES | Gate to Emitter Voltage | ±20 | V | |||
| IC | Collector Current @ TC = 25C | 150 | A | |||
| IC | Collector Current @ TC = 100C | 75 | A | |||
| ILM | Pulsed Collector Current @ TC = 25C (Note 1) | 300 | A | |||
| ICM | Pulsed Collector Current (Note 2) | 300 | A | |||
| IF | Diode Forward Current @ TC = 25C | 125 | A | |||
| IF | Diode Forward Current @ TC = 100C | 75 | A | |||
| IFM | Pulsed Diode Maximum Forward Current (Note 2) | 300 | A | |||
| PD | Maximum Power Dissipation @ TC = 25C | 455 | W | |||
| PD | Maximum Power Dissipation @ TC = 100C | 227 | W | |||
| TJ | Operating Junction Temperature | -55 | +175 | C | ||
| TSTG | Storage Temperature Range | -55 | +175 | C | ||
| TL | Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds | 300 | C | |||
| THERMAL CHARACTERISTICS | ||||||
| R JC (IGBT) | Thermal Resistance, Junction to Case, Max. | 0.33 | C/W | |||
| R JC (Diode) | Thermal Resistance, Junction to Case, Max. | 0.65 | C/W | |||
| R JA | Thermal Resistance, Junction to Ambient, Max. | 40 | C/W | |||
| ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25C unless otherwise noted) | ||||||
| BVCES | Collector to Emitter Breakdown Voltage | VGE = 0 V, IC = 1 mA | 650 | V | ||
| BVCES / TJ | Temperature Coefficient of Breakdown Voltage | IC = 1 mA, Reference to 25C | -0.65 | V/C | ||
| ICES | Collector CutOff Current | VCE = VCES, VGE = 0 V | 250 | µA | ||
| IGES | GE Leakage Current | VGE = VGES, VCE = 0 V | ±400 | nA | ||
| VGE(th) | GE Threshold Voltage | IC = 75 mA, VCE = VGE | 4.0 | 5.5 | 7.5 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage | IC = 75 A, VGE = 15 V | 1.6 | 2.1 | V | |
| VCE(sat) | Collector to Emitter Saturation Voltage | IC = 75 A, VGE = 15 V, TC = 175C | 2.28 | V | ||
| DYNAMIC CHARACTERISTICS | ||||||
| Cies | Input Capacitance | VCE = 30 V, VGE = 0 V, f = 1 MHz | 3710 | pF | ||
| Coes | Output Capacitance | 183 | pF | |||
| Cres | Reverse Transfer Capacitance | 43 | pF | |||
| SWITCHING CHARACTERISTICS (RG = 15 Ω) | ||||||
| Td(on) | TurnOn Delay Time | VCC = 400 V, IC = 75 A, VGE = 15 V, Inductive Load, TC = 25C | 55 | ns | ||
| Tr | Rise Time | 50 | ns | |||
| Td(off) | TurnOff Delay Time | 189 | ns | |||
| Tf | Fall Time | 39 | ns | |||
| Eon | TurnOn Switching Loss | 1.06 | mJ | |||
| Eoff | TurnOff Switching Loss | 1.56 | mJ | |||
| Ets | Total Switching Loss | 2.62 | mJ | |||
| Td(on) | TurnOn Delay Time | VCC = 400 V, IC = 75 A, VGE = 15 V, Inductive Load, TC = 175C | 48 | ns | ||
| Tr | Rise Time | 56 | ns | |||
| Td(off) | TurnOff Delay Time | 205 | ns | |||
| Tf | Fall Time | 40 | ns | |||
| Eon | TurnOn Switching Loss | 2.34 | mJ | |||
| Eoff | TurnOff Switching Loss | 1.81 | mJ | |||
| Ets | Total Switching Loss | 4.15 | mJ | |||
| Qg | Total Gate Charge | VCE = 400 V, IC = 75 A, VGE = 15 V | 126 | nC | ||
| Qge | Gate to Emitter Charge | 24.1 | nC | |||
| Qgc | Gate to Collector Charge | 47.6 | nC | |||
| ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25C unless otherwise noted) | ||||||
| VFM | Diode Forward Voltage | IF = 75 A, TC = 25C | 1.8 | 2.1 | V | |
| VFM | Diode Forward Voltage | IF = 75 A, TC = 175C | 1.7 | V | ||
| Erec | Reverse Recovery Energy | IF = 75 A, dIF/dt = 200 A/µs, TC = 175C | 160 | µJ | ||
| Trr | Diode Reverse Recovery Time | TC = 25C | 76 | ns | ||
| Trr | Diode Reverse Recovery Time | TC = 175C | 270 | ns | ||
| Qrr | Diode Reverse Recovery Charge | TC = 25C | 206 | nC | ||
| Qrr | Diode Reverse Recovery Charge | TC = 175C | 2199 | nC | ||
2411220146_onsemi-FGH75T65SHDTL4_C898195.pdf
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