Trench Technology onsemi FGY75T120SQDN Ultra Field Stop IGBT for High Power Switching Applications
Key Attributes
Model Number:
FGY75T120SQDN
Product Custom Attributes
Td(off):
332ns
Pd - Power Dissipation:
790W
Td(on):
64ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
137pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@0.4mA
Gate Charge(Qg):
399nC
Operating Temperature:
-55℃~+175℃@(Tj)
Reverse Recovery Time(trr):
99ns
Switching Energy(Eoff):
1.96mJ
Turn-On Energy (Eon):
6.25mJ
Input Capacitance(Cies):
9.06nF
Pulsed Current- Forward(Ifm):
300A
Output Capacitance(Coes):
242pF
Mfr. Part #:
FGY75T120SQDN
Package:
TO-247-3
Product Description
Product Overview
The FGY75T120SQDN is an Ultra Field Stop IGBT featuring a robust and cost-effective Trench construction. It offers superior performance in demanding switching applications with low on-state voltage and minimal switching loss. This IGBT is well-suited for UPS and solar applications and incorporates a soft and fast co-packaged free-wheeling diode with a low forward voltage.
Product Attributes
- Brand: ON Semiconductor
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions | |
| IGBT Characteristics | VCES | 1200 | V | ||
| VGES | ±20 | V | |||
| IC (TC=25°C) | 150 | A | |||
| IC (TC=100°C) | 75 | A | |||
| ILM(1) | 300 | A | TC=25°C, Pulsed | ||
| PD (TC=25°C) | 790 | W | |||
| TJ | -55 to +175 | °C | Operating Junction Temperature | ||
| Diode Characteristics | IF (TC=25°C) | 150 | A | ||
| IF (TC=100°C) | 75 | A | |||
| IFM | 300 | A | Pulsed Max. Forward Current | ||
| VFM (IF=75 A, TC=25°C) | - | 3.4 to 4 | V | ||
| Thermal Characteristics | RJC (IGBT) | 0.19 | °C/W | Max. | |
| RJC (Diode) | 0.38 | °C/W | Max. | ||
| RJA | 40 | °C/W | Max. | ||
| Electrical Characteristics (IGBT, TC=25°C) | BVCES | 1200 | V | VGE=0V, IC=500µA | |
| ICES | - | 400 | µA | VCE=VCES, VGE=0V | |
| VGE(th) | 4.5 to 6.5 | V | IC=400µA, VCE=VGE | ||
| VCE(sat) (IC=75 A, VGE=15 V) | - | 1.7 to 1.95 | V | ||
| Switching Characteristics (IGBT, TC=25°C) | td(on) | - | 64 | ns | VCC=600V, IC=75A, RG=10Ω, VGE=15V, Inductive Load |
| tr | - | 96 | ns | ||
| td(off) | - | 332 | ns | ||
| tf | - | 28 | ns | ||
| Eon | - | 6.25 | mJ | ||
| Eoff | - | 1.96 | mJ | ||
| Electrical Characteristics (Diode, TC=25°C) | trr (IF=75 A, dIF/dt=500 A/µs) | - | 99 | ns | VR=600V |
| Qrr | - | 1001 | nC | ||
| Irrm | - | 20 | A |
2411220650_onsemi-FGY75T120SQDN_C898206.pdf
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