power transistor onsemi HGTD1N120BNS9A for switching applications in AC DC motor and relay driver systems
Key Attributes
Model Number:
HGTD1N120BNS9A
Product Custom Attributes
Td(off):
67ns
Pd - Power Dissipation:
60W
Td(on):
15ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
-
IGBT Type:
NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
6V@50uA
Gate Charge(Qg):
14nC
Operating Temperature:
-55℃~+150℃@(Tj)
Switching Energy(Eoff):
90uJ
Turn-On Energy (Eon):
70uJ
Mfr. Part #:
HGTD1N120BNS9A
Package:
TO-252AA
Product Description
Product Overview
The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs, combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor. These devices are ideal for high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies, and drivers for solenoids and relays. Formerly Developmental Type TA49316.
Product Attributes
- Brand: ON Semiconductor (formerly Fairchild Semiconductor)
- Origin: United States and/or other countries
- Certifications: Not specified in the provided text.
Technical Specifications
| Part Number | Package | Brand | Collector to Emitter Voltage (V) | Collector Current Continuous (A at TC=25C) | Gate to Emitter Voltage (V) | Power Dissipation (W at TC=25C) | Thermal Resistance Junction To Case (C/W) |
| HGTD1N120BNS | TO-252AA | 1N120B | 1200 | 5.3 | 20 | 60 | 2.1 |
| HGTP1N120BN | TO-220AB | 1N120BN | 1200 | 5.3 | 20 | 60 | 2.1 |
2409301504_onsemi-HGTD1N120BNS9A_C462776.pdf
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