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quality Surface Mount NPN Resistor Equipped Transistor Nexperia PDTD114ETR with 500mA Output Current and High Temperature Operation factory
quality Surface Mount NPN Resistor Equipped Transistor Nexperia PDTD114ETR with 500mA Output Current and High Temperature Operation factory

Surface Mount NPN Resistor Equipped Transistor Nexperia PDTD114ETR with 500mA Output Current and High Temperature Operation

Key Attributes
Model Number: PDTD114ETR
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
10kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTD114ETR
Package:
SOT-23
Product Description

Product Overview

The Nexperia PDTD114ET is an NPN Resistor-Equipped Transistor (RET) designed for surface-mounted applications. It features built-in bias resistors, simplifying circuit design and reducing component count. With a 500 mA output current capability and high temperature operation up to 175 C, it is suitable for IC input control, switching loads, and as a cost-saving alternative to BC807 series transistors in digital applications. This AEC-Q101 qualified component is offered in a compact SOT23 package.

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN Resistor-Equipped Transistor (RET)
  • Package Type: SOT23 (TO-236AB)
  • Qualification: AEC-Q101 qualified

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage Open base - - 50 V
IO Output current - - - 500 mA
R1 Bias resistor 1 (input) [1] 7 10 13 k
R2/R1 Bias resistor ratio [1] 0.9 1 1.1 -
VCBO Collector-base voltage Open emitter - - 50 V
VEBO Emitter-base voltage Open collector - - 10 V
VI Input voltage positive - -10 - 50 V
Ptot Total power dissipation Tamb 25 C - 320 460 mW
Tj Junction temperature - - - 175 C
Tamb Ambient temperature - -55 - 175 C
Tstg Storage temperature - -55 - 175 C
Rth(j-a) Thermal resistance junction to ambient In free air [1] - - 470 K/W
Rth(j-a) Thermal resistance junction to ambient In free air [2] - - 327 K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 10 mA; IB = 0 A; Tamb = 25 C 50 - - V
ICBO Collector-base cut-off current VCB = 40 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 C - - 100 nA
IEBO Emitter-base cut-off current VCE = 50 V; IB = 0 A; Tamb = 25 C - - 0.5 A
hFE DC current gain VCE = 5 V; IC = 50 mA; Tamb = 25 C 70 - - -
VCEsat Collector-emitter saturation voltage IC = 50 mA; IB = 2.5 mA; Tamb = 25 C - - 100 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A; Tamb = 25 C 0.6 1 1.5 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 20 mA; Tamb = 25 C 1 1.9 3 V
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - 7 - pF
fT Transition frequency VCE = 5 V; IC = 50 mA; f = 100 MHz; Tamb = 25 C [2] - 225 - MHz

[1] See "Section 11: Test information" for resistor calculation and test conditions.
[2] Characteristics of built-in transistor.


2410010202_Nexperia-PDTD114ETR_C552244.pdf

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