1200V IGBT onsemi NGTB40N120FL2WG Featuring Co Packaged Free Wheeling Diode and High Speed Switching
Key Attributes
Model Number:
NGTB40N120FL2WG
Product Custom Attributes
Td(off):
286ns
Pd - Power Dissipation:
267W
Td(on):
116ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
140pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@400uA
Operating Temperature:
-55℃~+175℃
Gate Charge(Qg):
315nC@15V
Reverse Recovery Time(trr):
240ns
Switching Energy(Eoff):
1.1mJ
Turn-On Energy (Eon):
3.4mJ
Input Capacitance(Cies):
7.385nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
230pF
Mfr. Part #:
NGTB40N120FL2WG
Package:
TO-247
Product Description
NGTB40N120FL2W/D, NGTB40N120FL2WG - IGBT Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost-effective Field Stop II Trench construction, offering superior performance in demanding switching applications with low on-state voltage and minimal switching loss. It is well-suited for UPS and solar applications and incorporates a soft and fast co-packaged free-wheeling diode with a low forward voltage. The device is optimized for high-speed switching and has a 10 s short-circuit capability.
Product Attributes
- Brand: onsemi
- Certifications: PbFree Devices
Technical Specifications
| Rating | Symbol | Value | Unit | Notes |
| Collectoremitter voltage | VCES | 1200 | V | |
| Collector current @ TC = 25C | IC | 80 | A | |
| Collector current @ TC = 100C | IC | 40 | A | |
| Pulsed collector current, Tpulse limited by TJmax | ICM | 200 | A | |
| Diode forward current @ TC = 25C | IF | 80 | A | |
| Diode forward current @ TC = 100C | IF | 40 | A | |
| Diode pulsed current, Tpulse limited by TJmax | IFM | 200 | A | |
| Gateemitter voltage | VGE | 20 | V | |
| Transient gateemitter voltage (Tpulse = 5 s, D < 0.10) | VGE | 30 | V | |
| Power Dissipation @ TC = 25C | PD | 535 | W | |
| Power Dissipation @ TC = 100C | PD | 267 | W | |
| Short Circuit Withstand Time (VGE = 15 V, VCE = 500 V, TJ 150C) | TSC | 10 | s | |
| Operating junction temperature range | TJ | 55 to +175 | C | |
| Storage temperature range | Tstg | 55 to +175 | C | |
| Lead temperature for soldering, 1/8 from case for 5 seconds | TSLD | 260 | C | |
| Thermal resistance junctiontocase, for IGBT | R JC | 0.28 | C/W | |
| Thermal resistance junctiontocase, for Diode | R JC | 0.5 | C/W | |
| Thermal resistance junctiontoambient | R JA | 40 | C/W | |
| Collectoremitter breakdown voltage, gateemitter shortcircuited (VGE = 0 V, IC = 500 A) | V(BR)CES | 1200 | V | |
| Collectoremitter saturation voltage (VGE = 15 V, IC = 40 A) | VCEsat | 2.00 | V | TJ = 25C |
| Collectoremitter saturation voltage (VGE = 15 V, IC = 40 A) | VCEsat | 2.40 | V | TJ = 175C |
| Gateemitter threshold voltage (VGE = VCE, IC = 400 A) | VGE(th) | 4.5 - 6.5 | V | Typ = 5.5 |
| Collectoremitter cutoff current, gateemitter shortcircuited (VGE = 0 V, VCE = 1200 V) | ICES | 0.1 | mA | TJ = 175C |
| Gate leakage current, collectoremitter shortcircuited (VGE = 20 V, VCE = 0 V) | IGES | 200 | nA | |
| Input capacitance (VCE = 20 V, VGE = 0 V, f = 1 MHz) | Cies | 7385 | pF | Typ |
| Output capacitance (VCE = 20 V, VGE = 0 V, f = 1 MHz) | Coes | 230 | pF | Typ |
| Reverse transfer capacitance (VCE = 20 V, VGE = 0 V, f = 1 MHz) | Cres | 140 | pF | Typ |
| Gate charge total (VCE = 600 V, IC = 40 A, VGE = 15 V) | Qg | 313 | nC | Typ |
| Gate to emitter charge (VCE = 600 V, IC = 40 A, VGE = 15 V) | Qge | 61 | nC | Typ |
| Gate to collector charge (VCE = 600 V, IC = 40 A, VGE = 15 V) | Qgc | 151 | nC | Typ |
| Turnon delay time (TJ = 25C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | td(on) | 116 | ns | Typ |
| Rise time (TJ = 25C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | tr | 42 | ns | Typ |
| Turnoff delay time (TJ = 25C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | td(off) | 286 | ns | Typ |
| Fall time (TJ = 25C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | tf | 121 | ns | Typ |
| Turnon switching loss (TJ = 25C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | Eon | 3.4 | mJ | Typ |
| Turnoff switching loss (TJ = 25C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | Eoff | 1.1 | mJ | Typ |
| Total switching loss (TJ = 25C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | Ets | 4.5 | mJ | Typ |
| Turnon delay time (TJ = 175C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | td(on) | 111 | ns | Typ |
| Rise time (TJ = 175C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | tr | 43 | ns | Typ |
| Turnoff delay time (TJ = 175C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | td(off) | 304 | ns | Typ |
| Fall time (TJ = 175C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | tf | 260 | ns | Typ |
| Turnon switching loss (TJ = 175C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | Eon | 4.4 | mJ | Typ |
| Turnoff switching loss (TJ = 175C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | Eoff | 2.5 | mJ | Typ |
| Total switching loss (TJ = 175C, VCC = 600 V, IC = 40 A, Rg = 10 , VGE = 0 V/15V) | Ets | 6.9 | mJ | Typ |
| Forward voltage (VGE = 0 V, IF = 40 A) | VF | 2.00 | V | TJ = 25C, Typ |
| Forward voltage (VGE = 0 V, IF = 50 A) | VF | 2.30 | V | TJ = 175C, Typ |
| Forward voltage (VGE = 0 V, IF = 80 A) | VF | 2.60 | V | TJ = 175C, Typ |
| Reverse recovery time (TJ = 25C, IF = 40 A, VR = 400 V, diF/dt = 200 A/s) | trr | 240 | ns | Typ |
| Reverse recovery charge (TJ = 25C, IF = 40 A, VR = 400 V, diF/dt = 200 A/s) | Qrr | 2.5 | C | Typ |
| Reverse recovery current (TJ = 25C, IF = 40 A, VR = 400 V, diF/dt = 200 A/s) | Irrm | 18 | A | Typ |
| Reverse recovery time (TJ = 175C, IF = 40 A, VR = 400 V, diF/dt = 200 A/s) | trr | 392 | ns | Typ |
| Reverse recovery charge (TJ = 175C, IF = 40 A, VR = 400 V, diF/dt = 200 A/s) | Qrr | 5.36 | C | Typ |
| Reverse recovery current (TJ = 175C, IF = 40 A, VR = 400 V, diF/dt = 200 A/s) | Irrm | 25.80 | A | Typ |
2411220126_onsemi-NGTB40N120FL2WG_C364882.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
