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quality Compact SOT363 Package Nexperia PUMD2-QX Double Transistor RET for Peripheral Driving and IC Input Control factory
quality Compact SOT363 Package Nexperia PUMD2-QX Double Transistor RET for Peripheral Driving and IC Input Control factory

Compact SOT363 Package Nexperia PUMD2-QX Double Transistor RET for Peripheral Driving and IC Input Control

Key Attributes
Model Number: PUMD2-QX
Product Custom Attributes
Emitter-Base Voltage VEBO:
10V
Input Resistor:
22kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMD2-QX
Package:
TSSOP-6(SOT-363)
Product Description

Product Overview

The Nexperia PUMD2 is a resistor-equipped double transistor (RET) featuring both NPN and PNP configurations in a compact SOT363 (SC-88) SMD plastic package. It offers a 100 mA output current capability and incorporates built-in bias resistors, which simplify circuit design, reduce component count, and lower pick-and-place costs. This device is suitable for low-current peripheral driving, controlling IC inputs, and replacing general-purpose transistors in digital applications.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT363 (SC-88)
  • Configuration: NPN/PNP Resistor-Equipped Double Transistor (RET)

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO Collector-emitter voltage Open base - - 50 V
IO Output current - - 100 mA
R1 Bias resistor 1 (input) 15.4 22 28.6 k
R2/R1 Bias resistor ratio 0.8 1 1.2
VCBO Collector-base voltage Open emitter - - 50 V
VEBO Emitter-base voltage Open collector - - 10 V
VI (TR1 NPN) Input voltage -10 - 40 V
VI (TR2 PNP) Input voltage -40 - 10 V
Ptot Total power dissipation Tamb 25 C - - 200 mW
Tj Junction temperature - - 150 C
Tamb Ambient temperature -55 - 150 C
Tstg Storage temperature -65 - 150 C
Per device
Ptot Total power dissipation Tamb 25 C - - 300 mW
Characteristics
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A; Tamb = 25 C 50 - - V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 mA; Tamb = 25 C - - 180 A
hFE DC current gain VCE = 5 V; IC = 5 mA; Tamb = 25 C 60 - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - - 150 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A; Tamb = 25 C - 1.1 0.8 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 5 mA; Tamb = 25 C 2.5 1.7 - V
Cc (TR1 NPN) Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 2.5 pF
fT (TR1 NPN) Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C - 230 - MHz
Cc (TR2 PNP) Collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 3 pF
fT (TR2 PNP) Transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 C - 180 - MHz
Package Outline
Package TSSOP6 (SOT363) Body dimensions 2.1 x 1.25 x 0.95 mm
Pitch 0.65 mm

2504101957_Nexperia-PUMD2-QX_C5224568.pdf

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