650 Volt 75 Amp Field Stop Trench IGBT onsemi FGH75T65SQDT-F155 for telecom ESS and welding equipment
Key Attributes
Model Number:
FGH75T65SQDT-F155
Product Custom Attributes
Td(off):
114ns
Pd - Power Dissipation:
375W
Td(on):
23ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
14pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.6V@75mA
Gate Charge(Qg):
128nC@15V
Operating Temperature:
-55℃~+175℃@(Tj)
Reverse Recovery Time(trr):
76ns
Switching Energy(Eoff):
70uJ
Turn-On Energy (Eon):
300uJ
Input Capacitance(Cies):
4.845nF
Pulsed Current- Forward(Ifm):
300A
Output Capacitance(Coes):
155pF
Mfr. Part #:
FGH75T65SQDT-F155
Package:
TO-247-G03
Product Description
Product Overview
The FGH75T65SQDT is a 650 V, 75 A Field Stop Trench IGBT from ON Semiconductor. Leveraging novel field stop IGBT technology, this 4th generation IGBT offers optimal performance for applications requiring low conduction and switching losses, including solar inverters, UPS, welders, telecom, ESS, and PFC. Key features include a maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, low saturation voltage, and fast switching characteristics.
Product Attributes
- Brand: ON Semiconductor
- Certifications: RoHS Compliant
Technical Specifications
| Part Number | Description | VCES (V) | VGES (V) | IC @ TC=25C (A) | IC @ TC=100C (A) | ILM (A) | VCE(sat) Typ. @ IC=75A (V) | TJ (C) | PD @ TC=25C (W) | RJC(IGBT) (C/W) | RJC(Diode) (C/W) | RJA (C/W) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FGH75T65SQDT | 650 V, 75 A Field Stop Trench IGBT | 650 | ±20 | 150 | 75 | 300 | 1.6 | -55 to +175 | 375 | 0.4 | 0.65 | 40 |
2410122111_onsemi-FGH75T65SQDT-F155_C398050.pdf
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