Surface Mounted Device Transistor NPN PNP Double Resistor Nexperia PEMD30 115 for Circuit Solutions

Key Attributes
Model Number: PEMD30,115
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Output Voltage(VO(on)):
-
Input Resistor:
2.2kΩ
Resistor Ratio:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PEMD30,115
Package:
SOT-666-6
Product Description

Product Overview

The PEMD30 and PUMD30 are NPN/PNP double resistor-equipped transistors (RET) designed for surface-mounted device (SMD) applications. These transistors feature built-in bias resistors (R1 = 2.2 k, R2 = open), reducing component count and simplifying circuit design. They are ideal for low-current peripheral driving, controlling IC inputs, and switching loads, offering a cost-effective alternative to discrete components. Their integrated design contributes to reduced pick-and-place costs and simplified circuit board layouts.

Product Attributes

  • Brand: Philips Semiconductors
  • Product Type: NPN/PNP double resistor-equipped transistors (RET)
  • Package Type: Surface-Mounted Device (SMD) plastic packages
  • Resistor Configuration: R1 = 2.2 k, R2 = open

Technical Specifications

Type Number Package Name Package Description PNP/PNP Complement NPN/NPN Complement Output Current (IO) Bias Resistor R1 Collector-Emitter Voltage (VCEO) Collector-Base Voltage (VCBO) Emitter-Base Voltage (VEBO) Peak Collector Current (ICM) Total Power Dissipation (Ptot) per device (Tamb 25 C) Storage Temperature (Tstg) Junction Temperature (Tj) Ambient Temperature (Tamb) Thermal Resistance (Rth(j-a)) per transistor (free air) Thermal Resistance (Rth(j-a)) per device (free air) Collector-Base Cut-off Current (ICBO) Collector-Emitter Cut-off Current (ICEO) Emitter-Base Cut-off Current (IEBO) DC Current Gain (hFE) Collector-Emitter Saturation Voltage (VCEsat) Collector Capacitance (Cc)
PEMD30 SOT666 Plastic surface-mounted package; 6 leads PEMB30 PEMH30 100 mA 1.54 - 2.86 k (Typ: 2.2 k) 50 V 50 V 5 V 100 mA (tp 1 ms) 300 mW (SOT666) -65 to +150 C 150 C -65 to +150 C 625 K/W (SOT666) 416 K/W (SOT666) 100 nA (VCB = 50 V; IE = 0 A) 1 A (VCE = 30 V; IB = 0 A) 100 nA (VEB = 5 V; IC = 0 A) 30 (VCE = 5 V; IC = 20 mA) 150 mV (IC = 10 mA; IB = 0.5 mA) 2.5 pF (TR1 NPN) / 3 pF (TR2 PNP) (VCB = 10 V; IE = ie = 0 A; f = 1 MHz)
PUMD30 SOT363 (SC-88) Plastic surface-mounted package; 6 leads PUMB30 PUMH30 100 mA 1.54 - 2.86 k (Typ: 2.2 k) 50 V 50 V 5 V 100 mA (tp 1 ms) 300 mW (SOT363) -65 to +150 C 150 C -65 to +150 C 625 K/W (SOT363) 416 K/W (SOT363) 100 nA (VCB = 50 V; IE = 0 A) 1 A (VCE = 30 V; IB = 0 A) 100 nA (VEB = 5 V; IC = 0 A) 30 (VCE = 5 V; IC = 20 mA) 150 mV (IC = 10 mA; IB = 0.5 mA) 2.5 pF (TR1 NPN) / 3 pF (TR2 PNP) (VCB = 10 V; IE = ie = 0 A; f = 1 MHz)

Applications

  • Low current peripheral driver
  • Control of IC inputs
  • Switching loads

Marking Codes

Type Number Marking Code
PEMD30 2U
PUMD30 *B3

Note: '*' indicates manufacturing origin (e.g., -: Hong Kong, p: Hong Kong, t: Malaysia, W: China)

Ordering Information

Type Number Package Name Description Packing Quantity
PEMD30 SOT666 2 mm pitch, 8 mm tape and reel 8000
PEMD30 SOT666 4 mm pitch, 8 mm tape and reel 10000
PUMD30 SOT363 4 mm pitch, 8 mm tape and reel; T1 (normal taping) 3000
PUMD30 SOT363 4 mm pitch, 8 mm tape and reel; T2 (reverse taping) 4000

Package Outline

SOT363 (SC-88)

Dimensions in mm:

  • Length: 2.2 (2.0 to 2.4)
  • Width: 1.3 (1.15 to 1.35)
  • Height: 0.8 (0.7 to 0.9)
  • Lead pitch: 0.65

SOT666

Dimensions in mm:

  • Length: 1.7 (1.5 to 1.9)
  • Width: 1.3 (1.1 to 1.5)
  • Height: 0.5 (0.4 to 0.6)
  • Lead pitch: 0.5

Soldering Information

Reow soldering is the only recommended soldering method.

Reow soldering footprint SOT363 (SC-88)

Dimensions in mm:

  • Solder lands: 1.20 x 2.40
  • Solder resist occupied area: 2.10 x 3.75

Reow soldering footprint SOT666

Dimensions in mm:

  • Solder lands: 1.60 x 2.20
  • Solder resist occupied area: 2.00 x 2.50

2410121745_Nexperia-PEMD30-115_C552414.pdf

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