Surface Mounted Device Transistor NPN PNP Double Resistor Nexperia PEMD30 115 for Circuit Solutions
Product Overview
The PEMD30 and PUMD30 are NPN/PNP double resistor-equipped transistors (RET) designed for surface-mounted device (SMD) applications. These transistors feature built-in bias resistors (R1 = 2.2 k, R2 = open), reducing component count and simplifying circuit design. They are ideal for low-current peripheral driving, controlling IC inputs, and switching loads, offering a cost-effective alternative to discrete components. Their integrated design contributes to reduced pick-and-place costs and simplified circuit board layouts.
Product Attributes
- Brand: Philips Semiconductors
- Product Type: NPN/PNP double resistor-equipped transistors (RET)
- Package Type: Surface-Mounted Device (SMD) plastic packages
- Resistor Configuration: R1 = 2.2 k, R2 = open
Technical Specifications
| Type Number | Package Name | Package Description | PNP/PNP Complement | NPN/NPN Complement | Output Current (IO) | Bias Resistor R1 | Collector-Emitter Voltage (VCEO) | Collector-Base Voltage (VCBO) | Emitter-Base Voltage (VEBO) | Peak Collector Current (ICM) | Total Power Dissipation (Ptot) per device (Tamb 25 C) | Storage Temperature (Tstg) | Junction Temperature (Tj) | Ambient Temperature (Tamb) | Thermal Resistance (Rth(j-a)) per transistor (free air) | Thermal Resistance (Rth(j-a)) per device (free air) | Collector-Base Cut-off Current (ICBO) | Collector-Emitter Cut-off Current (ICEO) | Emitter-Base Cut-off Current (IEBO) | DC Current Gain (hFE) | Collector-Emitter Saturation Voltage (VCEsat) | Collector Capacitance (Cc) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PEMD30 | SOT666 | Plastic surface-mounted package; 6 leads | PEMB30 | PEMH30 | 100 mA | 1.54 - 2.86 k (Typ: 2.2 k) | 50 V | 50 V | 5 V | 100 mA (tp 1 ms) | 300 mW (SOT666) | -65 to +150 C | 150 C | -65 to +150 C | 625 K/W (SOT666) | 416 K/W (SOT666) | 100 nA (VCB = 50 V; IE = 0 A) | 1 A (VCE = 30 V; IB = 0 A) | 100 nA (VEB = 5 V; IC = 0 A) | 30 (VCE = 5 V; IC = 20 mA) | 150 mV (IC = 10 mA; IB = 0.5 mA) | 2.5 pF (TR1 NPN) / 3 pF (TR2 PNP) (VCB = 10 V; IE = ie = 0 A; f = 1 MHz) |
| PUMD30 | SOT363 (SC-88) | Plastic surface-mounted package; 6 leads | PUMB30 | PUMH30 | 100 mA | 1.54 - 2.86 k (Typ: 2.2 k) | 50 V | 50 V | 5 V | 100 mA (tp 1 ms) | 300 mW (SOT363) | -65 to +150 C | 150 C | -65 to +150 C | 625 K/W (SOT363) | 416 K/W (SOT363) | 100 nA (VCB = 50 V; IE = 0 A) | 1 A (VCE = 30 V; IB = 0 A) | 100 nA (VEB = 5 V; IC = 0 A) | 30 (VCE = 5 V; IC = 20 mA) | 150 mV (IC = 10 mA; IB = 0.5 mA) | 2.5 pF (TR1 NPN) / 3 pF (TR2 PNP) (VCB = 10 V; IE = ie = 0 A; f = 1 MHz) |
Applications
- Low current peripheral driver
- Control of IC inputs
- Switching loads
Marking Codes
| Type Number | Marking Code |
|---|---|
| PEMD30 | 2U |
| PUMD30 | *B3 |
Note: '*' indicates manufacturing origin (e.g., -: Hong Kong, p: Hong Kong, t: Malaysia, W: China)
Ordering Information
| Type Number | Package Name | Description | Packing Quantity |
|---|---|---|---|
| PEMD30 | SOT666 | 2 mm pitch, 8 mm tape and reel | 8000 |
| PEMD30 | SOT666 | 4 mm pitch, 8 mm tape and reel | 10000 |
| PUMD30 | SOT363 | 4 mm pitch, 8 mm tape and reel; T1 (normal taping) | 3000 |
| PUMD30 | SOT363 | 4 mm pitch, 8 mm tape and reel; T2 (reverse taping) | 4000 |
Package Outline
SOT363 (SC-88)
Dimensions in mm:
- Length: 2.2 (2.0 to 2.4)
- Width: 1.3 (1.15 to 1.35)
- Height: 0.8 (0.7 to 0.9)
- Lead pitch: 0.65
SOT666
Dimensions in mm:
- Length: 1.7 (1.5 to 1.9)
- Width: 1.3 (1.1 to 1.5)
- Height: 0.5 (0.4 to 0.6)
- Lead pitch: 0.5
Soldering Information
Reow soldering is the only recommended soldering method.
Reow soldering footprint SOT363 (SC-88)
Dimensions in mm:
- Solder lands: 1.20 x 2.40
- Solder resist occupied area: 2.10 x 3.75
Reow soldering footprint SOT666
Dimensions in mm:
- Solder lands: 1.60 x 2.20
- Solder resist occupied area: 2.00 x 2.50
2410121745_Nexperia-PEMD30-115_C552414.pdf
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