power transistor onsemi FGHL75T65MQDTL4 650 volt 75 amp field stop trench IGBT for power electronics
Key Attributes
Model Number:
FGHL75T65MQDTL4
Product Custom Attributes
Pd - Power Dissipation:
375W
Td(off):
181ns
Td(on):
32ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
14pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3V@75mA
Operating Temperature:
-55℃~+175℃@(Tj)
Gate Charge(Qg):
149nC
Reverse Recovery Time(trr):
107ns
Switching Energy(Eoff):
1.1mJ
Turn-On Energy (Eon):
1.2mJ
Input Capacitance(Cies):
4.954nF
Pulsed Current- Forward(Ifm):
300A
Output Capacitance(Coes):
163pF
Mfr. Part #:
FGHL75T65MQDTL4
Package:
TO-247-4LD
Product Description
Product Overview
The FGHL75T65MQDTL4 is a 650 V, 75 A Field Stop Trench IGBT featuring 4th generation mid-speed IGBT technology with full current-rated copack diode. It offers a maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, and low saturation voltage. Optimized for smooth and efficient switching, this device is suitable for applications such as solar inverters, UPS, ESS, and PFC converters.
Product Attributes
- Brand: onsemi
- Certifications: RoHS Compliant
Technical Specifications
| Rating | Symbol | Value | Unit | Conditions |
| Collector to Emitter Voltage | VCES | 650 | V | |
| Gate to Emitter Voltage | VGES | 20 | V | |
| Transient Gate to Emitter Voltage | 30 | V | ||
| Collector Current | IC | 80 / 75 | A | @ TC = 25C / 100C (Note 1) |
| Pulsed Collector Current | ILM | 300 | A | (Note 2) |
| Pulsed Collector Current | ICM | 300 | A | (Note 3) |
| Diode Forward Current | IF | 80 / 75 | A | @ TC = 25C / 100C (Note 1) |
| Pulsed Diode Maximum Forward Current | IFM | 300 | A | |
| Maximum Power Dissipation | PD | 375 / 188 | W | @ TC = 25C / 100C |
| Operating Junction and Storage Temperature Range | TJ, TSTG | 55 to +175 | C | |
| Maximum Lead Temp. for Soldering Purposes | TL | 260 | C | (1/8 from Case for 5 s) |
| Collector-emitter Breakdown Voltage | BVCES | 650 | V | VGE = 0 V, IC = 1 mA |
| Temperature Coefficient of Breakdown Voltage | BVCES/TJ | 0.6 | V/C | VGE = 0 V, IC = 1 mA |
| Collector-emitter Cut-off Current | ICES | 250 A | VGE = 0 V, VCE = 650 V | |
| Gate Leakage Current | IGES | 400 nA | VGE = 20 V, VCE = 0 V | |
| Gate-emitter Threshold Voltage | VGE(th) | 3.0 / 4.5 / 6.0 | V | VGE = VCE, IC = 75 mA |
| Collector-emitter Saturation Voltage | VCE(sat) | 1.45 / 1.65 | V | VGE = 15 V, IC = 75 A, TJ = 25C / 175C |
| Input Capacitance | Cies | 4954 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Output Capacitance | Coes | 163 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Reverse Transfer Capacitance | Cres | 14 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Gate Charge Total | Qg | 149 | nC | VCE = 400 V, IC = 75 A, VGE = 15 V |
| Gate-to-emitter Charge | Qge | 27 | nC | VCE = 400 V, IC = 75 A, VGE = 15 V |
| Gate-to-collector Charge | Qgc | 34 | nC | VCE = 400 V, IC = 75 A, VGE = 15 V |
| Turn-on Delay Time | td(on) | 30 / 32 / 27 / 30 | ns | TC = 25C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load; TC = 150C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load |
| Rise Time | tr | 16 / 29 / 19 / 32 | ns | TC = 25C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load; TC = 150C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load |
| Turn-off Delay Time | td(off) | 190 / 181 / 206 / 198 | ns | TC = 25C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load; TC = 150C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load |
| Fall Time | tf | 35 / 32 / 44 / 40 | ns | TC = 25C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load; TC = 150C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load |
| Turn-on Switching Loss | Eon | 0.6 / 1.2 / 1.9 / 2.0 | mJ | TC = 25C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load; TC = 150C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load |
| Turn-off Switching Loss | Eoff | 0.5 / 1.1 / 1.8 / 1.4 | mJ | TC = 25C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load; TC = 150C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load |
| Total Switching Loss | Ets | 1.1 / 2.3 / 1.8 / 3.4 | mJ | TC = 25C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load; TC = 150C, VCC = 400 V, IC = 37.5 A / 75 A, RG = 10 , VGE = 15 V, Inductive Load |
| Diode Forward Voltage | VFM | 1.65 / 1.55 | V | IF = 75 A, TJ = 25C / 175C |
| Reverse Recovery Energy | EREC | 105 / 235 / 747 / 865 | J | TC = 25C, VCE = 400 V, IF = 37.5 A / 75 A, dIF/dt = 1000 A/s; TC = 150C, VCE = 400 V, IF = 37.5 A / 75 A, dIF/dt = 1000 A/s |
| Diode Reverse Recovery Time | Trr | 58 / 107 / 151 / 171 | ns | TC = 25C, VCE = 400 V, IF = 37.5 A / 75 A, dIF/dt = 1000 A/s; TC = 150C, VCE = 400 V, IF = 37.5 A / 75 A, dIF/dt = 1000 A/s |
| Diode Reverse Recovery Charge | Qrr | 591 / 1113 / 2780 / 3286 | nC | TC = 25C, VCE = 400 V, IF = 37.5 A / 75 A, dIF/dt = 1000 A/s; TC = 150C, VCE = 400 V, IF = 37.5 A / 75 A, dIF/dt = 1000 A/s |
| Thermal Resistance Junction-to-case (IGBT) | R JC | 0.40 | C/W | |
| Thermal Resistance Junction-to-case (Diode) | R JC | 0.60 | C/W | |
| Thermal Resistance Junction-to-ambient | R JA | 40 | C/W |
2410121849_onsemi-FGHL75T65MQDTL4_C5209105.pdf
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