Double resistor transistor Nexperia PEMD13 115 in plastic SMD package offering performance in circuits

Key Attributes
Model Number: PEMD13,115
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
4.7kΩ
Resistor Ratio:
10
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PEMD13,115
Package:
SOT-666-6
Product Description

Product Overview

Nexperia's PEMD13 and PUMD13 are NPN/PNP double Resistor-Equipped Transistors (RET) in compact Surface-Mounted Device (SMD) plastic packages. These devices integrate built-in bias resistors, reducing component count, simplifying circuit design, and lowering pick-and-place costs. They are suitable for applications such as low-current peripheral drivers and controlling IC inputs, offering a reliable solution for replacing general-purpose transistors in digital applications. The PEMD13 and PUMD13 are AEC-Q101 qualified, ensuring suitability for demanding automotive applications.

Product Attributes

  • Brand: Nexperia
  • Certifications: AEC-Q101 qualified
  • Package Types: SOT666, SOT363 (SC-88)
  • Resistor Values: R1 = 4.7 kΩ, R2 = 47 kΩ

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor (TR2) with negative polarity
VCEO Collector-emitter voltage Open base - - 50 V
IO Output current - - - 100 mA
R1 Bias resistor 1 (input) - 3.3 4.7 6.1 kΩ
R2/R1 Bias resistor ratio - 8 10 12 -
VCBO Collector-base voltage Open emitter - - 50 V
VEBO Emitter-base voltage Open collector - - 5 V
VI Input voltage TR1 positive - - - +30 V
VI Input voltage TR1 negative - - - -5 V
VI Input voltage TR2 positive - - - +5 V
VI Input voltage TR2 negative - - - -30 V
ICM Peak collector current Single pulse; tp ≤ 1 ms - - 100 mA
Per device
Ptot Total power dissipation Tamb ≤ 25 °C (PEMD13 SOT666) - - 300 mW
Ptot Total power dissipation Tamb ≤ 25 °C (PUMD13 SOT363) - - 300 mW
Tj Junction temperature - - - 150 °C
Tamb Ambient temperature - -65 - +150 °C
Tstg Storage temperature - -65 - +150 °C
Thermal characteristics (FR4 PCB, standard footprint)
Rth(j-a) Thermal resistance from junction to ambient in free air (PEMD13 SOT666) - - - 625 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air (PUMD13 SOT363) - - - 625 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air (PEMD13 SOT666) Per device - - 417 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air (PUMD13 SOT363) Per device - - 417 K/W
Characteristics (Tamb = 25 °C unless otherwise specified)
Per transistor; for the PNP transistor (TR2) with negative polarity
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 1 µA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 °C - - 5 µA
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 170 µA
hFE DC current gain VCE = 5 V; IC = 10 mA 100 - - -
VCEsat Collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA - - 100 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 µA - 0.6 0.5 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 5 mA 1.3 0.9 - V
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 2.5 pF
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 3 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz - 230 - MHz
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz - 180 - MHz
Ordering Information
Type number Package Name Description Version Packing quantity
PEMD13 SOT666 Plastic surface-mounted package; 6 leads - 3000 4000 8000
PUMD13 SOT363 SC-88 plastic surface-mounted package; 6 leads - 3000 4000 8000

2410301810_Nexperia-PEMD13-115_C461178.pdf

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