Pb Free digital switching N Channel JFET transistor onsemi MMBFJ110 with very low on resistance

Key Attributes
Model Number: MMBFJ110
Product Custom Attributes
Pd - Power Dissipation:
460mW
Operating Temperature:
-
Drain Current (Idss):
10mA@15V
FET Type:
-
RDS(on):
18Ω
Gate-Source Breakdown Voltage (Vgss):
25V
Gate-Source Cutoff Voltage (VGS(off)):
4V@10nA
Mfr. Part #:
MMBFJ110
Package:
SOT-23-3
Product Description

Product Overview

The MMBFJ110 is an N-Channel JFET specifically designed for digital switching applications requiring very low on-resistance. Sourced from Process 58, this device is Pb-Free.

Product Attributes

  • Brand: ON Semiconductor
  • Origin: Sourced from Process 58
  • Certifications: Pb-Free

Technical Specifications

ParameterSymbolTest ConditionMinMaxUnit
OFF CHARACTERISTICS
Gate-Source Breakdown VoltageV(BR)GSSIG = -10 A, VDS = 0-25-V
Gate Reverse CurrentIGSSVGS = -15 V, VDS = 0--3.0nA
Gate Reverse CurrentIGSSVGS = -15 V, VDS = 0, TA = 100C--200nA
Gate-Source Cut-Off VoltageVGS(off)VDS = 15 V, ID = 10 nA-0.5-4.0V
ON CHARACTERISTICS
Zero-Gate Voltage Drain CurrentIDSSVDS = 15 V, VGS = 0 (Note 4)10-mA
Drain-Source On ResistancerDS(on)VDS 0.1 V, VGS = 0-18
SMALL SIGNAL CHARACTERISTICS
Drain-Gate & Source-Gate On CapacitanceCdg(on), Csg(on)VDS = 0, VGS = 0, f = 1.0 MHz-85pF
Drain-Gate & Source-Gate Off CapacitanceCdg(off), Csg(off)VDS = 0, VGS = -10 V, f = 1.0 MHz-15pF
MAXIMUM RATINGS
DrainGate VoltageVDG25V
GateSource VoltageVGS-25V
Forward Gate CurrentIGF10mA
Junction TemperatureTJ150C
Storage Temperature RangeTJ, TSTG-55150C
THERMAL CHARACTERISTICS
Total Device DissipationPDTA = 25C460mW
Derate Above 25C3.68mW/C
Thermal Resistance, Junction-to-AmbientRJADevice mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead minimum 6 cm.270C/W

2410121854_onsemi-MMBFJ110_C891685.pdf

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