High Voltage Silicon Carbide Device onsemi UJ3C120150K3S with Ultra Low Gate Charge and On Resistance
Key Attributes
Model Number:
UJ3C120150K3S
Product Custom Attributes
Mfr. Part #:
UJ3C120150K3S
Package:
TO-247-3
Product Description
Product Description
This Silicon Carbide (SiC) Cascode JFET is an EliteSiC Power N-Channel device designed for high-performance switching applications. It utilizes a unique 'cascode' circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. This design offers standard gate-drive characteristics, making it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si super-junction devices. The UJ3C120150K3S, available in a TO247-3 package, boasts ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and applications requiring standard gate drive. Its key advantages include ultra-low on-resistance, high operating temperature capability, and excellent reverse recovery. Typical applications include EV Charging, PV Inverters, Switch Mode Power Supplies, Power Factor Correction Modules, Motor Drives, and Induction Heating.
Product Attributes
- Brand: onsemi
- Material: Silicon Carbide (SiC)
- Certifications: Pb-Free, Halogen Free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS | ||||||
| Drain-source Voltage | VDS | 1200 | V | |||
| Gate-source Voltage | VGS | DC | -25 | +25 | V | |
| Continuous Drain Current (Note 1) | ID | TC = 25 C | 18.4 | A | ||
| Continuous Drain Current (Note 1) | ID | TC = 100 C | 13.8 | A | ||
| Pulsed Drain Current (Note 2) | IDM | TC = 25 C | 38 | A | ||
| Single Pulsed Avalanche Energy (Note 3) | EAS | L = 15 mH, IAS = 2 A | 30 | mJ | ||
| Power Dissipation | Ptot | TC = 25 C | 166.7 | W | ||
| Maximum Junction Temperature | TJ,max | 175 | C | |||
| Operating and Storage Temperature | TJ, TSTG | -55 | 175 | C | ||
| Max. Lead Temperature for Soldering, 1/8 from Case for 5 Seconds | TL | 250 | C | |||
| THERMAL CHARACTERISTICS | ||||||
| Thermal Resistance, Junction-to-Case | R JC | 0.7 | 0.9 | C/W | ||
| ELECTRICAL CHARACTERISTICS (TJ = +25 C unless otherwise specified) - STATIC | ||||||
| Drain-source Breakdown Voltage | BVDS | VGS = 0 V, ID = 1 mA | 1200 | V | ||
| Total Drain Leakage Current | IDSS | VDS = 1200 V, VGS = 0 V, TJ = 25 C | 2 | 50 | A | |
| Total Drain Leakage Current | IDSS | VDS = 1200 V, VGS = 0 V, TJ = 175C | 17 | A | ||
| Total Gate Leakage Current | IGSS | VDS = 0 V, TJ = 25 C, VGS = 20 V/ +20 V | 4 | 20 | A | |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 5 A, TJ = 25 C | 150 | 180 | m | |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 5 A, TJ = 125 C | 250 | m | ||
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 5 A, TJ = 175 C | 330 | m | ||
| Gate Threshold Voltage | VG(th) | VDS = 5 V, ID = 10 mA | 3.5 | 4.4 | 5.5 | V |
| Gate Resistance | RG | f = 1 MHz, open drain | 4.6 | |||
| ELECTRICAL CHARACTERISTICS (TJ = +25 C unless otherwise specified) - REVERSE DIODE | ||||||
| Diode Continuous Forward Current (Note 4) | IS | TC = 25 C | 18.4 | A | ||
| Diode Pulse Current (Note 5) | IS,pulse | TC = 25 C | 38 | A | ||
| Forward Voltage | VFSD | VGS = 0 V, IS = 5 A, TJ = 25 C | 1.46 | 2 | V | |
| Forward Voltage | VFSD | VGS = 0 V, IS = 5 A, TJ = 175 C | 2 | V | ||
| Reverse Recovery Charge | Qrr | VDS = 800 V, IS = 13 A, VGS = 0 V, RG_EXT = 20 , di/dt = 1700 A/ s, TJ = 150 C | 63 | nC | ||
| Reverse Recovery Time | trr | 28 | ns | |||
| ELECTRICAL CHARACTERISTICS (TJ = +25 C unless otherwise specified) - DYNAMIC | ||||||
| Input Capacitance | Ciss | VDS = 100 V, VGS = 0 V, f = 100 kHz | 738 | pF | ||
| Output Capacitance | Coss | 58 | pF | |||
| Reverse Transfer Capacitance | Crss | 1.8 | pF | |||
| Effective Output Capacitance, Energy Related | Coss(er) | VDS = 0 V to 800 V, VGS = 0 V | 34 | pF | ||
| Effective Output Capacitance, Time Related | Coss(tr) | 68 | pF | |||
| Coss Stored Energy | Eoss | VDS = 800 V, VGS = 0 V | 10.8 | J | ||
| Total Gate Charge | QG | VDS = 800 V, ID = 13 A, VGS = 5 V to 15 V | 30 | nC | ||
| Gate-drain Charge | QGD | 6 | ||||
| Gate-source Charge | QGS | 10 | ||||
| Turn-on Delay Time | td(on) | VDS = 800 V, ID = 13 A, Gate Driver = 5 V to +15 V, Turn-on RG_EXT = 1 , Turn-off RG_EXT = 20 , Inductive Load, FWD: UJ3D1205TS, TJ = 150 C | 21 | ns | ||
| Rise Time | tr | 10 | ns | |||
| Turn-off Delay Time | td(off) | 36 | ns | |||
| Fall Time | tf | 7 | ns | |||
| Turn-on Energy | EON | 175 | J | |||
| Turn-off Energy | EOFF | 46 | J | |||
| Total Switching Energy | ETOTAL | 221 | J | |||
2506231743_onsemi-UJ3C120150K3S_C45343199.pdf
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