80 Volt NPN Transistor Nexperia NHDTC144ETR with Built In Resistors and 100 Milliampere Current

Name: 80 Volt NPN Transistor Nexperia NHDTC144ETR with Built In Resistors and 100 Milliampere Current
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: NHDTC144ETR
Availability: InStock

Key Attributes

Model Number: NHDTC144ETR

Product Custom Attributes

Resistor Ratio:

Collector - Emitter Voltage VCEO:

80V

Mfr. Part #:

NHDTC144ETR

Package:

TO-236AB

Product Description

Nexperia NHDTC114/124/144ET Series: 80 V, 100 mA NPN Resistor-Equipped Transistors

Product Overview
The Nexperia NHDTC114/124/144ET series comprises NPN Resistor-Equipped Transistors (RETs) in a compact SOT23 (TO-236AB) surface-mounted plastic package. These transistors offer a high breakdown voltage of 80 V and an output current capability of 100 mA. Featuring built-in resistors, this series simplifies circuit design, reduces component count, and lowers pick and place costs, making them a cost-effective alternative for digital applications and for controlling IC inputs or switching loads. The series is AEC-Q101 qualified, ensuring suitability for automotive applications.

Product Attributes

Brand: Nexperia
Package Type: SOT23 (TO-236AB)
Transistor Type: NPN
Qualification: AEC-Q101

Technical Specifications

Model	R1 (k)	R2 (k)	VCEO (V)	IO (mA)	PNP Complement
NHDTC114ET	10	10	80	100	NHDTA114ET
NHDTC124ET	22	22	80	100	NHDTA124ET
NHDTC144ET	47	47	80	100	NHDTA144ET

Key Features and Benefits

100 mA output current capability
High breakdown voltage (80 V)
Built-in resistors for simplified circuit design
Reduced component count
Reduced pick and place costs
AEC-Q101 qualified

Applications

Digital applications
Cost-saving alternative for BC846 series in digital applications
Controlling IC inputs
Switching loads

Quick Reference Data

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
VCEO	Collector-emitter voltage	open base	-	-	80	V
IO	Output current	-	-	-	100	mA

Limiting Values

Symbol	Parameter	Conditions	Min	Max	Unit
VCBO	Collector-base voltage	open emitter	-	80	V
VCEO	Collector-emitter voltage	open base	-	80	V
VEBO	Emitter-base voltage	open collector	-	10	V
VI	Input voltage	NHDTC114ET	-10	+40	V
VI	Input voltage	NHDTC124ET	-10	+60	V
VI	Input voltage	NHDTC144ET	-10	+80	V
IO	Output current	-	-	100	mA
Ptot	Total power dissipation	Tamb 25 C (single-sided PCB)	-	250	mW
Ptot	Total power dissipation	Tamb 25 C (4-layer PCB)	-	350	mW
Tj	Junction temperature	-	-	150	C
Tamb	Ambient temperature	-	-55	150	C
Tstg	Storage temperature	-	-65	150	C

Characteristics

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
V(BR)CBO	Collector-base breakdown voltage	IC = 100 A; IE = 0 A	80	-	-	V
V(BR)CEO	Collector-emitter breakdown voltage	IC = 2 mA; IB = 0 A	80	-	-	V
ICBO	Collector-base cut-off current	VCB = 80 V; IE = 0 A	-	-	100	nA
ICEO	Collector-emitter cut-off current	VCE = 60 V; IB = 0 A	-	-	100	nA
ICEO	Collector-emitter cut-off current	VCE = 60 V; IB = 0 A; Tj = 150 C	-	-	5	A
IEBO	Emitter-base cut-off current	VEB = 7 V; IC = 0 A	-	-	600	A
IEBO	Emitter-base cut-off current	VEB = 7 V; IC = 0 A	-	-	270	A
IEBO	Emitter-base cut-off current	VEB = 7 V; IC = 0 A	-	-	130	A
hFE	DC current gain	VCE = 5 V; IC = 10 mA	50	-	-	-
hFE	DC current gain	VCE = 5 V; IC = 10 mA	70	-	-	-
hFE	DC current gain	VCE = 5 V; IC = 10 mA	100	-	-	-
VCEsat	Collector-emitter saturation voltage	IC = 10 mA; IB = 0.5 mA	-	-	100	mV
VI(off)	Off-state input voltage	VCE = 5 V ; IC = 100 A	0.8	1.15	-	V
VI(on)	On-state input voltage	VCE = 0.3 V ; IC = 10 mA	1.8	2.5	-	V
VI(on)	On-state input voltage	VCE = 0.3 V ; IC = 10 mA	2.3	3	-	V
VI(on)	On-state input voltage	VCE = 0.3 V ; IC = 10 mA	3.3	5	-	V
R1	Bias resistor 1 (input)	-	7	10	13	k
R1	Bias resistor 1 (input)	-	15.4	22	28.6	k
R1	Bias resistor 1 (input)	-	33	47	61	k
R2/R1	Bias resistor ratio	-	0.8	1	1.2	-
fT	Transition frequency (built-in transistor)	VCE = 5 V; IC = 10 mA; f = 100 MHz	-	170	-	MHz
Cc	Collector capacitance	VCB = 10 V; IE = ie = 0 A; f = 1 MHz	-	-	2.5	pF

Package Outline

TO-236AB (SOT23)

Dimensions are in millimeters.

Soldering Footprints

Reflow Soldering Footprint (TO-236AB / SOT23)

Wave Soldering Footprint (TO-236AB / SOT23)

2410121942_Nexperia-NHDTC144ETR_C3588645.pdf

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80 Volt NPN Transistor Nexperia NHDTC144ETR with Built In Resistors and 100 Milliampere Current