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quality Compact SOT363 Package Nexperia PUMH9 125 Resistor Equipped Double Transistor 50 Volt 100 Milliampere factory
quality Compact SOT363 Package Nexperia PUMH9 125 Resistor Equipped Double Transistor 50 Volt 100 Milliampere factory

Compact SOT363 Package Nexperia PUMH9 125 Resistor Equipped Double Transistor 50 Volt 100 Milliampere

Key Attributes
Model Number: PUMH9,125
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
13kΩ
Resistor Ratio:
5.7
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMH9,125
Package:
TSSOP-6
Product Description

Product Overview

The Nexperia PUMH9 is a 50 V, 100 mA NPN/NPN resistor-equipped double transistor (RET) in a compact SOT363 (SC-88) SMD plastic package. It features built-in bias resistors (R1 = 10 k, R2 = 47 k) that simplify circuit design, reduce component count, and lower pick-and-place costs. This transistor is suitable for digital applications in automotive and industrial segments, serving as a cost-saving alternative for BC847 series in digital applications, controlling IC inputs, and switching loads.

Product Attributes

  • Brand: Nexperia
  • Product Type: Resistor-Equipped Double Transistor (RET)
  • Package Type: TSSOP6 (SOT363)
  • Complementary Products: PNP/PNP complement: PUMB9, NPN/PNP complement: PUMD9

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO Collector-emitter voltage open base - - 50 V
IO Output current - - - 100 mA
R1 Bias resistor 1 (input) [1] 7 10 13 k
R2/R1 Bias resistor ratio [1] 3.7 4.7 5.7 -
VCBO Collector-base voltage open emitter - - 50 V
VEBO Emitter-base voltage open collector - - 6 V
VI Input voltage positive - - 40 V
VI Input voltage negative - - -6 V
IO Output current - - - 100 mA
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -55 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance junction to ambient [1] - - 625 K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A 50 - - V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 150 A
hFE DC current gain VCE = 5 V; IC = 5 mA 100 - - -
VCEsat Collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA - - 100 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A - 0.7 0.5 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 1 mA 1.4 0.8 - V
R1 Bias resistor 1 (input) [1] 7 10 13 k
R2/R1 Bias resistor ratio [1] 3.7 4.7 5.7 -
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz - - 2.5 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz [2] - 230 - MHz
Per device
Ptot Total power dissipation Tamb 25 C [1] - - 300 mW
Rth(j-a) Thermal resistance junction to ambient [1] - - 417 K/W

[1] Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated and standard footprint.

[2] Characteristics of built-in transistor

Package Dimensions:

  • Body: 2.1 mm x 1.25 mm x 0.95 mm
  • Pitch: 0.65 mm

Marking Code: H%9 (where % is a placeholder for manufacturing site code)


2410121943_Nexperia-PUMH9-125_C553541.pdf

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