Compact SOT 883 package onsemi TF412ST5G N Channel JFET for infrared sensor and amplifier circuits
Key Attributes
Model Number:
TF412ST5G
Product Custom Attributes
Ciss-Input Capacitance:
4pF@10V
Pd - Power Dissipation:
100mW
Drain Current (Idss):
3mA@10V
FET Type:
1 N-channel
RDS(on):
-
Gate-Source Breakdown Voltage (Vgss):
30V
Gate-Source Cutoff Voltage (VGS(off)):
-
Mfr. Part #:
TF412ST5G
Package:
SOT-883-3
Product Description
Product Overview
The TF412S is an N-Channel JFET designed for low-frequency general-purpose amplification, impedance conversion, and infrared sensor applications. Its ultrasmall SOT-883 package facilitates miniaturization in end products. Key features include low IGSS (max 1.0nA) and low Ciss (typ 4pF), contributing to efficient circuit design. This device is halogen-free compliant and offers ESD immunity < 200V (Machine Model).
Product Attributes
- Brand: onsemi
- Certifications: Halogen free compliance
- Package: SOT-883
- Material: Pb-free and Halogen Free
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit | ||||
| Drain-to-Source Breakdown Voltage | V(BR)GDS | IG = 10A, VDS=0V | 30 | V | ||||
| Gate-to-Source Leakage Current | IGSS | VGS = 20V, VDS=0V | 1.0 | nA | ||||
| Cutoff Voltage | VGS(off) | VDS = 10V, ID = 1A | 0.18 | 0.80 | 1.5 | V | ||
| Drain Current | IDSS | VDS = 10V, VGS = 0V | 1.2 | 3.0 | mA | |||
| Forward Transfer Admittance | | yfs | | VDS = 10V, VGS=0V, f = 1kHz | 3.0 | 5.0 | mS | |||
| Input Capacitance | Ciss | VDS = 10V, VGS = 0V, f = 1MHz | 4 | pF | ||||
| Reverse Transfer Capacitance | Crss | VDS = 10V, VGS = 0V, f = 1MHz | 1.1 | pF |
2410121818_onsemi-TF412ST5G_C719800.pdf
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