Industrial automation power module onsemi NFAQ1560R43TL with 600 volt 15 amp rating and thermistor included
Key Attributes
Model Number:
NFAQ1560R43TL
Product Custom Attributes
Mfr. Part #:
NFAQ1560R43TL
Package:
DIP-38
Product Description
Product Overview
The NFAQ1560R43T is a fully-integrated intelligent power module (IPM) featuring a 600 V, 15 A rating. It comprises a high-voltage driver, six IGBTs utilizing FS4 RC IGBT technology, and a thermistor. This module is designed for driving permanent magnet synchronous motors (PMSM), brushless-DC (BLDC) motors, and AC asynchronous motors. The 3-phase bridge configuration with separate emitter connections for lower legs offers flexibility in control algorithm selection. Integrated protection functions include cross-conduction protection, external shutdown, and under-voltage lockout. An internal comparator and reference allow for adjustable over-current protection levels.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Product Code: NFAQ1560R43T
- Certifications: UL1557 Certification (File Number: E339285)
- Device Type: PbFree Device
- Package: DIP38 (29.6 mm x 18.2 mm)
- Typical Applications: Industrial Pumps, Industrial Fans, Industrial Automation, Home Appliances
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Supply Voltage | VPN | P NU, NV, NW | 0 | 450 | V | |
| VPN (surge) | P NU, NV, NW, VPN | 450 | V | |||
| CollectorEmitter Voltage | VCES | P U, V, W; U NU; V NV; W NW | 600 | V | ||
| Each IGBT Collector Current | IC | P, U, V, W, NU, NV, NW terminal current | 15 | A | ||
| IC | P, U, V, W, NU, NV, NW terminal current, TC = 100C | 7.5 | A | |||
| Each IGBT Collector Current (Peak) | ICp | TC = 25C, Under 1 ms Pulse Width | 30 | A | ||
| Collector Dissipation | PC | TC = 25C, Per One Chip (IGBT Part) | 50 | W | ||
| Collector Dissipation | PC | TC = 25C, Per One Chip (FRD Part) | 26.5 | W | ||
| HighSide Control Bias voltage | VBS | VB(U) VS(U), VB(V) VS(V), VB(W) VS(W) | 0.3 | +20.0 | V | |
| Control Supply Voltage | VDD | VDD VSS | 0.3 | +20.0 | V | |
| Input Signal Voltage | VIN | HIN(U), HIN(V), HIN(W), LIN(U), LIN(V), LIN(W) VSS | 0.3 | VDD | V | |
| Operating Junction Temperature | Tj | 150 | C | |||
| Storage Temperature | Tstg | 40 | +125 | C | ||
| Module Case Operation Temperature | Tc | 40 | +125 | C | ||
| Isolation Voltage | Viso | 50 Hz sine wave AC 1 minute | 2000 | Vrms | ||
| Supply Voltage | VPN | P NU, NV, NW | 0 | 450 | V | |
| HighSide Control Bias Voltage | VBS | VB(U) VS(U), VB(V) VS(V), VB(W) VS(W) | 13.0 | 15 | 17.5 | V |
| Control Supply Voltage | VDD | VDD VSS | 14.0 | 15 | 16.5 | V |
| ONstate Input Voltage | VIN(ON) | HIN(U), HIN(V), HIN(W), LIN(U), LIN(V), LIN(W) VSS | 3.0 | 5.0 | V | |
| OFFstate Input Voltage | VIN(OFF) | 0 | 0.3 | V | ||
| PWM Frequency | fPWM | 1 | 20 | kHz | ||
| CollectorEmitter Leakage Current | ICES | VCE = 600 V | 100 | A | ||
| CollectorEmitter Saturation Voltage | VCE(sat) | IN = 5 V, IC = 15 A, Tj = 25 C | 1.8 | 2.5 | V | |
| CollectorEmitter Saturation Voltage | VCE(sat) | IN = 5 V, IC = 7.5 A, Tj = 100 C | 1.4 | V | ||
| Forward Voltage | VF | IN = 0 V, IC = 15 A, Tj = 25 C | 2.0 | 2.5 | V | |
| Forward Voltage | VF | IN = 0 V, IC = 7.5 A, Tj = 100 C | 1.6 | V | ||
| Junction to Case Thermal Resistance | Rth(jc)Q | Inverter IGBT Part (per 1/6 Module) | 2.5 | C/W | ||
| Junction to Case Thermal Resistance | Rth(jc)F | Inverter FRD Part (per 1/6 Module) | 4.7 | C/W | ||
| Switching Time | tON | IC = 15 A, VPN = 300 V, Tj = 25 C, Inductive Switching | 0.4 | 1.1 | s | |
| Switching Time | tOFF | IC = 15 A, VPN = 300 V, Tj = 25 C, Inductive Switching | 0.5 | 1.2 | s | |
| Turnon Switching Loss | EON | IC = 15 A, VPN = 300 V, Tj = 25 C | 360 | J | ||
| Turnoff Switching Loss | EOFF | IC = 15 A, VPN = 300 V, Tj = 25 C | 260 | J | ||
| Total Switching Loss | ETOT | IC = 15 A, VPN = 300 V, Tj = 25 C | 620 | J | ||
| Turnon Switching Loss | EON | IC = 7.5 A, VPN = 300 V, Tj = 100 C | 180 | J | ||
| Turnoff Switching Loss | EOFF | IC = 7.5 A, VPN = 300 V, Tj = 100 C | 180 | J | ||
| Total Switching Loss | ETOT | IC = 7.5 A, VPN = 300 V, Tj = 100 C | 360 | J | ||
| Diode Reverse Recovery Energy | EREc | IC = 7.5 A, VPN = 300 V, Tj = 100 C, (di/dt set by internal driver) | 110 | J | ||
| Diode Reverse Recovery Time | tRR | 120 | ns | |||
| Quiescent VBS Supply Current | IQBS | VBS = 15 V, HIN = 0 V, per driver | 0.08 | 0.4 | mA | |
| Quiescent VDD Supply Current | IQDD | VDD = 15 V, LIN = 0 V, VDD VSS | 0.95 | 3.0 | mA | |
| ON Threshold Voltage | VIN(ON) | HIN(U), HIN(V), HIN(W), LIN(U), LIN(V), LIN(W) VSS | 2.5 | V | ||
| OFF Threshold Voltage | VIN(OFF) | 0.8 | V | |||
| Logic 1 Input Current | IIN+ | VIN = +3.3 V | 660 | 900 | A | |
| Logic 0 Input Current | IIN | VIN = 0 V | 3 | A | ||
| Bootstrap ON Resistance | RB | IB = 1 mA | 500 | |||
| FAULT Terminal Sink Current | IoSD | FAULT: ON / VFAULT = 0.1 V | 2 | mA | ||
| FaultOutput Pulse Width | tFOD | FAULT VSS From time fault condition clear R = 2 M, C = 1 nF | 1.1 | 1.65 | 2.2 | ms |
| Shut Down Threshold | VSD+ | SD VSS | 2.5 | V | ||
| Shut Down Threshold | VSD | SD VSS | 0.8 | V | ||
| ITRIP Trip Level | VITRIP | ITRIP VSS | 0.44 | 0.49 | 0.54 | V |
| ITRIP to Shutdown Propagation Delay | tITRIP | 1.1 | s | |||
| ITRIP Blanking Time | tITRIPBL | 250 | 350 | ns | ||
| HighSide Control Bias Voltage UnderVoltage Protection Reset Level | UVBSR | 10.3 | 11.1 | 11.9 | V | |
| HighSide Control Bias Voltage UnderVoltage Protection Detection Level | UVBSD | 10.1 | 10.9 | 11.7 | V | |
| Control Supply Voltage UnderVoltage Protection Reset Level | UVDDR | 10.3 | 11.1 | 11.7 | V | |
| Control Supply Voltage UnderVoltage Protection Detection Level | UVDDD | 10.1 | 10.9 | 11.5 | V |
2411261540_onsemi-NFAQ1560R43TL_C2902159.pdf
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