Silicon NPN transistor NH MMBT4401 general purpose epitaxial planar transistor with Pb free compact SOT23 package

Key Attributes
Model Number: MMBT4401
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
300mW
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
60V
Mfr. Part #:
MMBT4401
Package:
SOT-23
Product Description

Product Overview

The MMBT4401 is an NPN Silicon General Purpose Transistor from Niuhang Specification Electronic Co. Ltd. It offers a high current capacity in a compact SOT-23 package, making it suitable for various electronic applications. This epitaxial planar type transistor is Pb-Free and designed for general-purpose use.

Product Attributes

  • Brand: Niuhang Specification Electronic Co. Ltd
  • Package: SOT-23
  • Certifications: Epoxy UL: 94V-0
  • Material: Silicon
  • Mounting Position: Any
  • Pb-Free Package: Available

Technical Specifications

SymbolCharacteristicTest ConditionMin.Typ.Max.Unit
VOLTAGE:Collector-Emitter Breakdown VoltageIC=1mA,IB=040--V
Collector-Emitter Breakdown VoltageIC=100A,IE=0--60V
Collector-Base Breakdown VoltageVEB=0.4V--40V
Emitter-Base Breakdown VoltageIC=100A,IE=0--6V
Base-Emitter Saturation VoltageVCE=1V,IC=150mA--1.1V
Collector-Emitter Saturation VoltageVCE=2V,Ic=500mA--0.75V
CURRENT:Collector Cutoff CurrentVCE=35V,VEB=0.4V--100nA
Emitter Cutoff CurrentIE=100A,IC=0--100A
Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.)Ic--0.6A
Thermal CharacteristicsJunction Temperature---150
Storage Temperature Range--55-150
ELECTRICAL CHARACTERISTICSDC Current GainVCE=35V,VEB=0.4V----
Transition FrequencyVCE=20V,IC=20mA ,f=100MHz-100-MHz

2410121819_NH-MMBT4401_C7427898.pdf

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