650 volt 75 amp igbt inverter smart power module onsemi NFAL7565L4BT designed for pmsm bldc and ac induction motor control
Key Attributes
Model Number:
NFAL7565L4BT
Product Custom Attributes
Mfr. Part #:
NFAL7565L4BT
Product Description
Product Overview
The NFAL7565L4BT is a 650 V, 75 A, 3-phase IGBT inverter Smart Power Module (SPM) designed for AC induction, BLDC, and PMSM motors. It integrates optimized gate drive for IGBTs to reduce EMI and losses, along with comprehensive on-module protection features including under-voltage lockouts, over-current shutdown, temperature sensing, and fault reporting. The module utilizes a high-speed HVIC requiring a single supply voltage and provides separate negative IGBT terminals for flexible control algorithm implementation. Its Al2O3 DBC substrate ensures very low thermal resistance.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Certifications: UL Certified No. 209204 (UL1557)
- Compliance: RoHS Compliant
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
| INVERTER PART | |||||
| Supply Voltage (VPN) | Applied between P NU, NV, NW | 450 | V | ||
| Supply Voltage (VPN surge) | Applied between P NU, NV, NW | 550 | V | ||
| Collector-Emitter Voltage (Vces) | 650 | V | |||
| Collector Current (Ic) | Each IGBT, Tc = 25C, Tj 150C | 75 | A | ||
| Collector Current (Peak) (Icp) | Each IGBT, Tc = 25C, Tj 150C, Under 1 ms Pulse Width | 150 | A | ||
| Collector Dissipation (Pc) | Tc = 25C per One Chip | 223 | W | ||
| Operating Junction Temperature (Tj) | -40 | 150 | C | ||
| Junction-to-Case Thermal Resistance (Rth(j-c)Q) | Inverter IGBT Part (per 1/6 module) | 0.56 | C/W | ||
| Junction-to-Case Thermal Resistance (Rth(j-c)F) | Inverter FWDi Part (per 1/6 module) | 0.84 | C/W | ||
| Collector-Emitter Saturation Voltage (VCE(sat)) | VDD = VBS = 15 V, IN = 5 A, Ic = 75 A, Tj = 25C | 1.55 | 2.05 | V | |
| FWDi Forward Voltage (VF) | IN = 0 A, Ic = -75 A, Tj = 25C | 2.05 | 2.55 | V | |
| CONTROL PART | |||||
| Control Supply Voltage (VDD) | Applied between VDD(H), VDD(L) VSS | 20 | V | ||
| High-Side Control Bias Voltage (VBS) | Applied between VB(U) VS(U), VB(V) VS(V), VB(W) VS(W) | 20 | V | ||
| Input Signal Voltage (VIN) | Applied between HIN(U), HIN(V), HIN(W), LIN(U), LIN(V), LIN(W) VSS | -0.5 | VDD+0.5 | V | |
| Fault Output Supply Voltage (VFO) | Applied between VFO VSS | -0.5 | VDD+0.5 | V | |
| Fault Output Current (IFO) | Sink Current at VFO pin | 5 | mA | ||
| Current Sensing Input Voltage (VCIN) | Applied between CIN VSS | -0.5 | VDD+0.5 | V | |
| Operating Junction Temperature (Tj) | -40 | 150 | C | ||
| Quiescent VDD Supply Current (IQDDH) | VDD(UH,VH,WH) = 15 V, HIN(U,V,W) = 0 V | 0.30 | mA | ||
| Quiescent VDD Supply Current (IQDDL) | VDD(L) = 15 V, LIN(U,V,W) = 0 V | 3.50 | mA | ||
| Operating VDD Supply Current (IPDDH) | VDD(UH,VH,WH) = 15 V, FPWM = 20 kHz, Duty = 50%, Applied to one PWM Signal Input for High-Side | 0.40 | mA | ||
| Operating VDD Supply Current (IPDDL) | VDD(L) = 15 V, FPWM = 20 kHz, Duty = 50%, Applied to one PWM Signal Input for Low-Side | 7.00 | mA | ||
| Quiescent VBS Supply Current (IQBS) | VDD = VBS = 15 V, HIN(U,V,W) = 0 V | 0.30 | mA | ||
| Operating VBS Supply Current (IPBS) | VDD = VBS = 15 V, FPWM = 20 kHz, Duty = 50%, Applied to one PWM Signal Input for High-Side | 6.00 | mA | ||
| Short Circuit Trip Level (VSC(ref)) | VDD = 15 V, CIN VSS(L) | 0.46 | 0.48 | 0.50 | V |
| BOOSTSTRAP DIODE PART | |||||
| Maximum Repetitive Reverse Voltage (VRRM) | 650 | V | |||
| Operating Junction Temperature (Tj) | -40 | 150 | C | ||
| TOTAL SYSTEM | |||||
| Self-Protection Supply Voltage Limit (VPN(PROT)) | Short-Circuit Protection Capability, VDD = VBS = 13.5~16.5 V, Tj = 150C, Vces < 650 V, Non-Repetitive, < 2 s | 400 | V | ||
| Module Case Operation Temperature (Tc) | -40 | 125 | C | ||
| Storage Temperature (Tstg) | -40 | 125 | C | ||
| Isolation Voltage (Viso) | 60 Hz, Sinusoidal, AC 1 Minute, Connection Pins to Heat Sink Plate | 2500 | Vrms | ||
2411220036_onsemi-NFAL7565L4BT_C906582.pdf
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