Low Vf Schottky Barrier Rectifier NH MBR20L60CT Suitable for Automotive Electronics and LED Lighting
Key Attributes
Model Number:
MBR20L60CT
Product Custom Attributes
Reverse Leakage Current (Ir):
100uA@60V
Non-Repetitive Peak Forward Surge Current:
180A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
60V
Voltage - Forward(Vf@If):
600mV@10A
Current - Rectified:
20A
Mfr. Part #:
MBR20L60CT
Package:
TO-220AB
Product Description
Niuhang MBR20L60CT Low Vf Schottky Barrier Rectifiers
The Niuhang MBR20L60CT is a Low Vf Schottky Barrier Rectifier designed for high efficiency and low power loss applications. Featuring NH'S Low Vf Schottky Barrier Chip Technology, it offers a super low forward voltage drop and high frequency switching speed. This RoHS-compliant rectifier is ideal for Switch Mode Power Supplies (SMPS), Fast Chargers, LED Driver and Monitor Lighting, and Automotive Electronics.
Product Attributes
- Brand: Niuhang
- Product Line: MBR20L60CT
- Certifications: RoHS-Compliant, UL-94 ClassV-0 Recognized
- Material: Molded Case, Tin Plated Leads
- Origin: Niuhang Electronic Specification Technology Co., Ltd
Technical Specifications
| Parameter | Test Conditions | Symbol | Ratings | Unit | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|---|
| Maximum Ratings | |||||||
| Maximum Repetitive Peak Reverse Voltage | VRRM | 60 | V | ||||
| Maximum RMS Voltage | VRMS | 42 | V | ||||
| Maximum DC Blocking Voltage | VDC | 60 | V | ||||
| Maximum Average Forward Rectified Current Per Diode | IF(AV) | 10 | A | ||||
| Maximum Average Forward Rectified Current Total device | IF(AV) | 20 | A | ||||
| Peak Forward Surge Current Per Diode | 8.3ms Single Half Sine-wave Superimposed On Rate Load | IFSM | 180 | A | |||
| Current Squared Time Per Diode | t< 8.3ms | I2t | 134.5 | A2sec | |||
| Maximum Mounting Torque | M3 screw | TMM | 1.1 | N.m | |||
| Electrical Characteristics | |||||||
| Instantaneous Forward Voltage Per Diode | Ta=25, IF= 10.0 A | VF | V | 0.53 | 0.6 | ||
| Instantaneous Forward Voltage Per Diode | Ta=100, IF= 10.0 A | VF | V | 0.49 | 0.55 | ||
| Maximum DC Reverse Current at Rated DC Blocking Voltage | Ta=25,VR=VRRM | IRRM | uA | 10 | 100 | ||
| Maximum DC Reverse Current at Rated DC Blocking Voltage | Ta=100,VR=VRRM*80% | IRRM | mA | 1 | 10 | ||
| Typical Junction Capacitance Per Diode | 4 V,1MHz | CJ | pF | 460 | |||
| Maximum Reverse Recovery Time | IF=0.5A, IR=1.0A, IRR=0.25A | Trr | nS | 0 | |||
| Thermal Characteristics | |||||||
| Operating Junction Temperature Range | TJ | -55 | 150 | ||||
| Storage Temperature Range | TSTD | -55 | 150 | ||||
| Thermal Resistance Junction To Ambient | Still Air Environment, With Steady-State | RJA | /W | 62.5 | |||
| Thermal Resistance Junction To Case | Device Mounted On 75mm x 45mm x 2.5mm Alu. Heat., With Steady-State With Ta=25 | RJC | /W | 2.0 | |||
2508201745_NH-MBR20L60CT_C7428061.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
