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quality Integrated power module onsemi NFAM3065L4B with high side gate driver and bootstrap diode protection factory
quality Integrated power module onsemi NFAM3065L4B with high side gate driver and bootstrap diode protection factory

Integrated power module onsemi NFAM3065L4B with high side gate driver and bootstrap diode protection

Key Attributes
Model Number: NFAM3065L4B
Product Custom Attributes
Mfr. Part #:
NFAM3065L4B
Package:
DIP-39
Product Description

Intelligent Power Module (IPM), 650 V, 30 A - NFAM3065L4B

The NFAM3065L4B is a fully-integrated inverter power module designed for driving permanent magnet synchronous (PMSM), brushless DC (BLDC), and AC asynchronous motors. It features an independent High side gate driver, LVIC, six IGBTs, and a temperature sensor. The module's three-phase bridge configuration with separate emitter connections for lower legs offers flexibility in control algorithms. Key advantages include built-in undervoltage lockout protection (UVP) and integrated bootstrap diodes.

Product Attributes

  • Brand: Semiconductor Components Industries, LLC (onsemi)
  • Product Code: NFAM3065L4B
  • Certifications: UL1557 Certified (File No.339285)
  • Compliance: PbFree and RoHS Compliant

Technical Specifications

Parameter Conditions Min Typ Max Unit
General Specifications
Supply Voltage (VPN) PNU, NV, NW - 300 400 V
Gate Driver Supply Voltages (VDD) VDD(UH,VH,WH), VDD(L)VSS 13.5 15 16.5 V
High-Side Control Bias Voltage (VBS) VB(U)VS(U), VB(V)VS(V), VB(W)VS(W) 13.0 15 18.5 V
PWM Frequency (fPWM) - 1 - 20 kHz
Dead Time (DT) Turn-off to Turn-on (external) 1.5 - - µs
Allowable r.m.s. Current (Io) VPN = 300 V, VDD = 15 V, P.F. = 0.8, Tc ≤ 125°C, Tj ≤ 150°C - - 25.7 (fPWM = 5 kHz) A rms
Allowable r.m.s. Current (Io) VPN = 300 V, VDD = 15 V, P.F. = 0.8, Tc ≤ 125°C, Tj ≤ 150°C - - 18.8 (fPWM = 15 kHz) A rms
Inverter Section
Collector-Emitter Voltage (VCES) - - - 650 V
Collector Current (Ic) Each IGBT - - ±30 A
Collector Current Peak (Icp) Each IGBT (Under 1 ms Pulse Width) - - ±60 A
Collector-Emitter Saturation Voltage (VCE(sat)) Ic = 30 A, Tj = 25°C - 1.60 2.30 V
Collector-Emitter Saturation Voltage (VCE(sat)) Ic = 30 A, Tj = 150°C - 1.80 - V
Forward Voltage (VF) If = 30 A, Tj = 25°C - 2.00 2.40 V
Forward Voltage (VF) If = 30 A, Tj = 150°C - 2.00 - V
High side Switching Times (ton) Ic = 30 A, Tj = 25°C, Inductive Load - 0.80 1.85 µs
High side Switching Times (toff) Ic = 30 A, Tj = 25°C, Inductive Load - 1.60 2.20 µs
Low side Switching Times (ton) Ic = 30 A, Tj = 25°C, Inductive Load - 0.80 2.00 µs
Low side Switching Times (toff) Ic = 30 A, Tj = 25°C, Inductive Load - 1.60 2.20 µs
Driver Section
Quiescent VDD Supply Current (IQDDH) High-Side - - 0.30 mA
Quiescent VDD Supply Current (IQDDL) Low-Side - - 3.50 mA
Operating VDD Supply Current (IPDDH) High-Side, fPWM = 20 kHz, Duty = 50% - - 0.40 mA
Operating VDD Supply Current (IPDDL) Low-Side, fPWM = 20 kHz, Duty = 50% - - 6.00 mA
Quiescent VBS Supply Current (IQBS) - - - 0.30 mA
Operating VBS Supply Current (IPBS) fPWM = 20 kHz, Duty = 50% - - 5.00 mA
ON Threshold Voltage (VIN(ON)) - - - 2.6 V
OFF Threshold Voltage (VIN(OFF)) - 0.8 - - V
Short Circuit Trip Level (VCIN(ref)) VDD = 15 V 0.46 0.48 0.50 V
Under-Voltage Protection (UVDDD) Detection Level 10.3 - 12.5 V
Thermal Characteristics
Junction-to-Case Thermal Resistance (Rth(j-c)Q) Inverter IGBT Part (per 1/6 module) - - 1.1 °C/W
Junction-to-Case Thermal Resistance (Rth(j-c)F) Inverter FWD Part (per 1/6 module) - - 2.2 °C/W

Typical Applications

  • Industrial Drives
  • Industrial Pumps
  • Industrial Fans
  • Industrial Automation

2411272252_onsemi-NFAM3065L4B_C604138.pdf

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